IRF7338PBF International Rectifier, IRF7338PBF Datasheet

MOSFET N+P 12V 6.3A/3A 8-SOIC

IRF7338PBF

Manufacturer Part Number
IRF7338PBF
Description
MOSFET N+P 12V 6.3A/3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7338PBF

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
34 mOhm @ 6A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
6.3A, 3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
8.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
640pF @ 9V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
34 mOhms
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
6.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
34 ns, 25 ns
Gate Charge Qg
5.7 nC
Minimum Operating Temperature
- 55 C
Rise Time
7.6 ns, 13 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF7338PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7338PBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
Thermal Resistance
www.irf.com
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
Absolute Maximum Ratings
Description
Symbol
R
R
V
I
I
I
P
P
V
D
D
DM
T
DS
D
D
GS
θJL
θJA
J,
@ T
@ T
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
ƒ
GS
GS
@ 4.5V
@ 4.5V
G2
G1
S2
S1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
Top View
N-Channel
±12 „
6.3
5.2
12
26
Typ.
–––
–––
HEXFET
8
7
6
5
IRF7338PbF
-55 to + 150
D1
D1
D2
Max.
D2
2.0
1.3
16
R
V
®
DS(on)
DSS
Power MOSFET
P-Channel
Max.
62.5
20
0.034Ω 0.150Ω
-3.0
-2.5
-12
-13
N-Ch
12V
± 8.0
SO-8
PD - 95197
P-Ch
-12V
Units
°C/W
mW/°C
°C
W
V
1
9/30/04

Related parts for IRF7338PBF

IRF7338PBF Summary of contents

Page 1

... N-CHANNEL MOSFET P-CHANNEL MOSFET Top View N-Channel 12 @ 4.5V 6 4.5V 5 ±12 „ Typ. ––– ƒ ––– 95197 IRF7338PbF ® HEXFET Power MOSFET N-Ch P- 12V -12V DSS 0.034Ω 0.150Ω DS(on) SO-8 Max. P-Channel -12 -3.0 -2.5 -13 2 ...

Page 2

... IRF7338PbF Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... BOTTOM 1.5V BOTTOM 1.5V 1 0 Drain-to-Source Voltage (V) 100.0 10 150°C 1.0 0.1 3.0 4.0 0.4 IRF7338PbF VGS 1.5V 20µs PULSE WIDTH Tj = 150° 150° 25° 0.6 0.8 1.0 1 Source-toDrain Voltage (V) 10 1.4 3 ...

Page 4

... IRF7338PbF 2.0 6. 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature J 0.05 0.04 0. 6.3A 0.02 3.0 4.0 5.0 6.0 V GS, Gate -to -Source Voltage (V) 4 0.12 0.10 0.08 0.06 0.04 0. 4.5V GS 0.00 80 100 120 140 160 0 ° 0.00 7 Drain Current (A) 0.00 0.00 ...

Page 5

... Crss Drain-to-Source Voltage (V) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 www.irf.com MHZ 6. 0.0 100 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7338PbF 12V 2.0 4.0 6.0 8.0 10.0 12 Total Gate Charge (nC Notes: 1. Duty factor Peak thJA A 0 ...

Page 6

... IRF7338PbF 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 100 T , Case Temperature C Fig 12. Maximum Drain Current Vs. Case Temperature Charge Fig 14a. Basic Gate Charge Waveform 6 Fig 13a. Switching Time Test Circuit V DS 90% 125 150 ° 10 Fig 13b. Switching Time Waveforms 12V V GS Fig 14b ...

Page 7

... GS , Gate-to-Source Voltage (V) www.irf.com 100 TOP 10 BOTTOM -1.5V -1.5V 1 0.1 10 0.1 100.0 10 150°C 1.0 0.1 3.0 4.0 0.4 IRF7338PbF VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V -1.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 25° 0.6 0.8 1.0 1.2 1.4 ...

Page 8

... IRF7338PbF 2 -3.0A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature J 0.12 0.10 0. -3.0A 0.06 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) 8 0.20 0.18 0.16 0.14 0.12 0.10 0. -4.5V GS 0.06 80 100 120 140 160 0 ° 6.0 7.0 8.0 0. -2. -4. Drain Current (A) ...

Page 9

... C oss = Ciss 400 200 Coss Crss Drain-to-Source Voltage (V) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 1 0.1 0.00001 0.0001 www.irf.com MHZ -2. 100 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7338PbF -9.6V VDS= -6. Total Gate Charge (nC Notes: 1. Duty factor Peak thJA A 0 ...

Page 10

... IRF7338PbF 3.0 2.4 1.8 1.2 0.6 0 100 T , Case Temperature C Fig 26. Maximum Drain Current Vs. Case Temperature Charge Fig 28a. Basic Gate Charge Waveform 10 Fig 27a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 27b. Switching Time Waveforms Current Regulator Same Type as D.U.T. ...

Page 11

... 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL LAS T DIGIT YEAR WW = WEEK XXXX EMBLY SIT E CODE F7101 LOT CODE PART NUMBER IRF7338PbF INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 ...

Page 12

... IRF7338PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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