IRF7343PBF International Rectifier, IRF7343PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7343PBF
• Description: MOSFET N+P 55V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7343PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 4.7A, 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: N amd P
• Current, Drain: 4.7/-3.4 N/P A
• Package Type: SO-8
• Power Dissipation: 2/2 N/P W
• Resistance, Drain To Source On: 0.05/0.105 N/P Ohm
• Thermal Resistance, Junction To Ambient: 62.5/62.5 N/P °C/W
• Voltage, Drain To Source: 55/-55 N/P V
• Voltage, Gate To Source: +-20 V
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.7 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 13 ns, 22 ns
• Gate Charge Qg: 24 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 3.2 ns, 10 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
100
10
10
1
1
0.1
3
TOP
BOTTOM
V
DS
V
VGS
15V
12V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
3.0V
GS
, Drain-to-Source Voltage (V)
T = 25 C
J
, Gate-to-Source Voltage (V)
1
4
°
3.0V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 150 C
J
10
5
= 25V
°
°
100
6
100
0.1
10
100
1
10
0.2
1
0.1
TOP
BOTTOM
V
V
SD
T = 150 C
DS
4.5V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.5V
3.0V
J
0.5
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
°
IRF7343PbF
1
0.8
T = 25 C
3.0V
J
20µs PULSE WIDTH
T = 150 C
J
10
°
1.1
V
°
GS
= 0 V
1.4
3
100