IRF7343PBF International Rectifier, IRF7343PBF Datasheet - Page 7

• Manufacturer Part Number: IRF7343PBF
• Description: MOSFET N+P 55V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7343PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 4.7A, 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: N amd P
• Current, Drain: 4.7/-3.4 N/P A
• Package Type: SO-8
• Power Dissipation: 2/2 N/P W
• Resistance, Drain To Source On: 0.05/0.105 N/P Ohm
• Thermal Resistance, Junction To Ambient: 62.5/62.5 N/P °C/W
• Voltage, Drain To Source: 55/-55 N/P V
• Voltage, Gate To Source: +-20 V
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.7 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 13 ns, 22 ns
• Gate Charge Qg: 24 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 3.2 ns, 10 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2.0
1.5
1.0
0.5
0.0
0.45
0.35
0.25
0.15
0.05
-60 -40 -20
2
I =
D
-3.4 A
-V
T , Junction Temperature ( C)
GS
J
5
0
, Gate-to-Source Voltage (V)
I
D
20
= -3.4 A
40 60
8
80 100 120 140 160
11
V
°
GS
=
-10V
14
A
0.240
0.200
0.160
0.120
0.080
300
250
200
150
100
50
0
25
0
Starting T , Junction Temperature ( C)
2
50
-I
VGS = -4.5V
D
J
IRF7343PbF
, Drain Current (A)
4
75
6
100
TOP
BOTTOM
8
VGS = -10V
125
10
-1.5A
-2.7A
-3.4A
°
I D
150
7
12