IRF7343PBF International Rectifier, IRF7343PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7343PBF
• Description: MOSFET N+P 55V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7343PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 4.7A, 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: N amd P
• Current, Drain: 4.7/-3.4 N/P A
• Package Type: SO-8
• Power Dissipation: 2/2 N/P W
• Resistance, Drain To Source On: 0.05/0.105 N/P Ohm
• Thermal Resistance, Junction To Ambient: 62.5/62.5 N/P °C/W
• Voltage, Drain To Source: 55/-55 N/P V
• Voltage, Gate To Source: +-20 V
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.7 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 13 ns, 22 ns
• Gate Charge Qg: 24 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 3.2 ns, 10 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
1200
1000
0.1
10
800
600
400
200
0.0001
1
0
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
V
DS
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
(THERMAL RESPONSE)
0.001
=
=
=
=
SINGLE PULSE
0V,
C
C
C
gs
gd
ds
C iss
C rss
C oss
+ C
+ C
10
f = 1MHz
gd ,
gd
C
ds
0.01
t , Rectangular Pulse Duration (sec)
SHORTED
1
100
0.1
20
16
12
8
4
0
0
I =
D
4.5A
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
Q , Total Gate Charge (nC)
G
10
J
IRF7343PbF
V
V
V
DM
DS
DS
DS
x Z
= 48V
= 30V
= 12V
1
20
thJA
P
2
10
DM
+ T
A
t
1
30
t
2
100
5
40