IRFI4212H-117P International Rectifier, IRFI4212H-117P Datasheet

IRFI4212H-117P

Manufacturer Part Number

IRFI4212H-117P

Description

MOSFET N-CH 100V 11A TO-220FP-5

Manufacturer

International Rectifier

Datasheet

1.IRFI4212H-117P.pdf (7 pages)

Specifications of IRFI4212H-117P

Fet Type

2 N-Channel (Dual)

Fet Feature

Standard

Rds On (max) @ Id, Vgs

72.5 mOhm @ 6.6A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

11A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

18nC @ 10V

Input Capacitance (ciss) @ Vds

490pF @ 50V

Power - Max

18W

Mounting Type

Through Hole

Package / Case

TO-220-5 Full Pack (Straight Leads)

Configuration

Dual

Transistor Polarity

Dual N-Channel

Resistance Drain-source Rds (on)

72.5 mOhms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

11 A

Power Dissipation

18 W

Mounting Style

Through Hole

Gate Charge Qg

12 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFI4212H-117P

Manufacturer:

Quantity:

12 500

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRFI4212H-117P

Company:

H&T Electronics

Part Number:

IRFI4212H-117P

Quantity:

3 400

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Features

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It

consists of two power MosFET switches connected in half-bridge configuration. The latest process is used

to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,

and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors

such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and

reliable device for Class D audio amplifier applications.

www.irf.com

Absolute Maximum Ratings g

Thermal Resistance g

STG

θJC

θJA

@ T

Integrated half-bridge package

Reduces the part count by half

Facilitates better PCB layout

Key parameters optimized for Class-D

audio amplifier applications

Low R

Low Qg and Qsw for better THD and

improved efficiency

Low Qrr for better THD and lower EMI

Can delivery up to 150W per channel into

4Ω load in half-bridge configuration

amplifier

Lead-free package

= 25°C

= 100°C

= 25°C

= 100°C

DS(ON)

for improved efficiency

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current c

Power Dissipation f

Linear Derating Factor

Single Pulse Avalanche Energyd

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Junction-to-Case f

Junction-to-Ambient (free air)

Parameter

@ 10V

DS(ON)

G(int)

max

typ.

G1, G2

Gate

typ.

typ. @ 10V

IRFI4212H-117P

Key Parameters g

Typ.

–––

10lbxin (1.1Nxm)

-55 to + 150

D1, D2

Drain

Max.

0.14

100

300

±20

6.8

7.0

TO-220 Full-Pak 5 PIN

Max.

7.1

100

150

6.9

3.4

Source

S1, S2

Units

W/°C

°C/W

°C

08/21/06

°C

Ω

Related parts for IRFI4212H-117P

IRFI4212H-117P Summary of contents

Page 1

... Single Pulse Avalanche Energyd Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6- screw Thermal Resistance g Junction-to-Case f R θJC R Junction-to-Ambient (free air) θJA www.irf.com IRFI4212H-117P Key Parameters typ. @ 10V DS(ON) Q typ typ typ. G(int) T max J G1, G2 ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V BOTTOM 6.0V 10 6.0V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150°C ...

Page 4

150° 25°C 1 0.1 0.0 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 T J ...

Page 5

125°C 125 100 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate ...

Page 6

TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117 (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak 5-Pin Part Marking Information IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 6 IR Data and specifications subject ...

Page 7

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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