IRFI4212H-117P International Rectifier, IRFI4212H-117P Datasheet - Page 2

• Manufacturer Part Number: IRFI4212H-117P
• Description: MOSFET N-CH 100V 11A TO-220FP-5
• Manufacturer: International Rectifier

Specifications of IRFI4212H-117P

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72.5 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 50V
• Power - Max: 18W
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Full Pack (Straight Leads)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 72.5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 18 W
• Mounting Style: Through Hole
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


‚
ƒ
„
…
BV
∆ΒV
R
V
∆V
I
I
g
Q
Q
R
t
t
t
t
C
C
C
C
L
L
I
I
V
t
Q
Electrical Characteristics @ T
Diode Characteristics g
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
fs
D
S
GS(th)
SD
DS(on)
G(int)
iss
oss
rss
oss
R
g
Q
Q
Q
Q
sw
rr
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Specifications refer to single MosFET.
2
@ T
GS(th)
DSS
θ
gs1
gs2
gd
godr
DSS
is measured at
eff.
C
/∆T
/∆T
= 25°C Continuous Source Current
J
J
J
= 25°C, L = 1.9mH, R
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
(Body Diode)
Pulsed Source Current
(Body Diode) c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
Parameter
G
Parameter
= 25Ω, I
gs2
+ Q
J
AS
= 25°C (unless otherwise specified) g
gd
= 6.6A.
)
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
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–––
–––
–––
–––
–––
–––
–––
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–––
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–––
–––
3.0
11
0.09
0.71
–––
–––
–––
–––
–––
–––
–––
490
110
–––
–––
–––
-11
1.6
6.2
3.5
6.9
3.4
4.7
8.3
9.5
4.3
4.5
7.5
58
12
64
34
36
56
72.5
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
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–––
5.0
1.3
11
54
84
20
18
44
mV/°C
V/°C
mΩ
nC
µA
nA
nC
pF
nH
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 6 and 15
V
I
R
V
V
ƒ = 1.0MHz,
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs e
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
J
J
G
= 6.6A
= 6.6A
= 25°C, I
= 25°C, I
= 2.5Ω
= 0V, I
= 10V, I
= V
= 100V, V
= 100V, V
= 20V
= -20V
= 50V, I
= 80V
= 10V
= 50V, V
= 0V
= 50V
= 0V, V
GS
, I
D
Conditions
D
Conditions
S
F
DS
D
D
= 250µA
GS
= 6.6A
= 6.6A, V
= 250µA
= 6.6A
= 6.6A e
GS
GS
= 0V to 80V
= 10V e
= 0V
= 0V, T
See Fig.5
D
www.irf.com
= 1mA
GS
J
= 0V e
= 125°C
G
S
D