IRFI4212H-117P International Rectifier, IRFI4212H-117P Datasheet - Page 3

• Manufacturer Part Number: IRFI4212H-117P
• Description: MOSFET N-CH 100V 11A TO-220FP-5
• Manufacturer: International Rectifier

Specifications of IRFI4212H-117P

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72.5 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 50V
• Power - Max: 18W
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Full Pack (Straight Leads)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 72.5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 18 W
• Mounting Style: Through Hole
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
10000
1000
100
100
100
0.1
10
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
3
1
TOP
BOTTOM
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
1
5
C oss
C iss
C rss
T J = 25°C
f = 1 MHZ
V DS = 50V
≤60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
10
6
6.0V
10
7
8
100
100
9
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
12.0
10.0
100
2.5
2.0
1.5
1.0
0.5
8.0
6.0
4.0
2.0
0.0
10
Fig 2. Typical Output Characteristics
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
0
TOP
BOTTOM
I D = 6.6A
V GS = 10V
I D = 6.6A
V DS , Drain-to-Source Voltage (V)
2
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
V DS = 80V
V DS = 50V
V DS = 20V
4
1
6
≤ 60µs PULSE WIDTH
Tj = 150°C
8
6.0V
10
10
12
100
14
3