AO4620 Alpha & Omega Semiconductor Inc, AO4620 Datasheet

MOSFET N/P-CH COMPL 30V 8-SOIC

AO4620

Manufacturer Part Number
AO4620
Description
MOSFET N/P-CH COMPL 30V 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4620

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.2A, 5.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
14.125nC @ 10V
Input Capacitance (ciss) @ Vds
792pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1045-2

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Avalanche Current
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4620
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4620 uses advanced trench technology
MOSFETs to provide excellent R
charge. The complementary MOSFETs may be used
in inverter and other applications.
F
Top View
F
B
Pin1
SOIC-8
B
T
T
T
T
A
A
A
A
=25° C
=70° C
=25° C
=70° C
C
C
Bottom View
A
A
A
A
A
=25° C unless otherwise noted
DS(ON)
B
Steady-State
Steady-State
Steady-State
Steady-State
and low gate
t ≤ 10s
t ≤ 10s
Symbol
V
V
I
I
P
I
E
T
D
DM
AR
DS
GS
D
AR
J
, T
STG
S2
G2
S1
G1
Symbol
Features
n-channel
V
I
R
< 24m
< 36m
100% UIS tested
100% Rg tested
Top View
R
R
R
R
Max n-channel
D
1
2
3
4
DS
DS(ON)
= 7.2A (V
JA
JL
JA
JL
-55 to 150
(V) = 30V
1.44
±20
7.2
6.2
8
7
6
5
30
30
13
25
2
(V
(V
Device
GS
GS
GS
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
D2
D2
D1
D1
=10V)
=4.5V)
=10V)
G2
Max p-channel
n-channel
Typ
-30V
R
p-channel
-5.3A (V
50
80
32
50
80
32
< 38m
< 60m
DS(ON)
-55 to 150
D2
S2
1.44
-5.3
-4.5
±20
-30
-30
17
43
2
GS
(V
(V
G1
Max
= -10V)
62.5
62.5
GS
GS
100
100
40
40
p-channel
= -10V)
= -4.5V)
www.aosmd.com
D1
S1
Units
Units
° C/W
° C/W
° C/W
° C/W
° C/W
° C/W
mJ
° C
W
V
V
A
A

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AO4620 Summary of contents

Page 1

... AO4620 Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent R charge. The complementary MOSFETs may be used in inverter and other applications. SOIC-8 Top View Bottom View Pin1 Absolute Maximum Ratings T Parameter Drain-Source Voltage Gate-Source Voltage T =25° ...

Page 2

... AO4620 N-CHANNEL Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...

Page 3

... AO4620 P-CHANNEL Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...

Page 4

... AO4620 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 5V 10V (Volts) DS Figure 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS ...

Page 5

... AO4620 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =7. (nC) g Figure 7: Gate-Charge Characteristics 100.0 10.0 R DS(ON) limited 1.0 T =150°C J(Max) 0.1 T =25°C A 0.0 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =100°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED ...

Page 6

... AO4620 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -4.5V -10V 25 - (Volts) DS Figure 1: On-Region Characteristics 60 V =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd - -3. =- 2.00 1.80 1.60 1.40 1.20 V =-10V 1.00 GS 0.80 - 1.0E+01 1.0E+00 I =-5 ...

Page 7

... AO4620 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-5. (nC) g Figure 7: Gate-Charge Characteristics 100.0 10.0 R DS(ON) limited 0.1s 1.0 10s 0.1 T =150°C J(Max) T =25°C A 0.0 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =100°C/W ...

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