IRF7342QTRPBF International Rectifier, IRF7342QTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7342QTRPBF
• Description: MOSFET P-CH DUAL 55V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7342QTRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7342QTRPBFCT

IRF7342QPbF
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
I
I
V
t
Q
Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
SM
S
rr
d(on)
r
d(off)
f
DSS
fs
GSS
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
max. junction temperature. ( See fig. 11 )
Repetitive rating; pulse width limited by
(BR)DSS
Starting T
R
2
G
= 25Ω, I
/∆T
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25°C, L = 20mH
AS
= -3.4A. (See Figure 8)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
…
T
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
I
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
SD
––– -0.054 –––
––– 0.095 0.105
––– 0.150 0.170
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-55
3.3
J
≤ 150°C
≤ -3.4A, di/dt ≤ -150A/µs, V
–––
–––
–––
–––
–––
–––
–––
690
210
–––
3.0
8.4
54
85
26
14
10
43
22
86
-100
-1.2
130
–––
–––
-2.0
–––
–––
–––
–––
100
-25
4.5
80
38
13
22
15
64
32
V/°C
nC
nC
pF
ns
V
V
Ω
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs ƒ
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 9
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -3.1A
= -1.0A
= 25°C, I
= 25°C, I
DD
= 16Ω, „
= 6.0Ω
= V
= -20V
= 20V
= 0V, I
= -10V, I
= -4.5V, I
= -10V, I
= -55V, V
= -55V, V
= -44V
= -10V, See Fig. 10 „
= 0V
= -25V
= -28V
≤ V
GS
Conditions
(BR)DSS
, I
D
S
F
D
Conditions
= -250µA
D
D
= -2.0A, V
= -2.0A
D
= -250µA
GS
GS
= -3.4A „
= -3.1A
= -2.7A „
,
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 55°C
= 0V ƒ
G
S
D