IRF7555TR International Rectifier, IRF7555TR Datasheet - Page 2
IRF7555TR
Manufacturer Part Number
IRF7555TR
Description
MOSFET 2P-CH 20V 4.3A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7555TR.pdf
(7 pages)
Specifications of IRF7555TR
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1066pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7555TR
IRF7555
IRF7555CT
IRF7555
IRF7555CT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7555TR
Manufacturer:
ROHM
Quantity:
876
Part Number:
IRF7555TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7555TRPBF
Manufacturer:
IR
Quantity:
20 000
Notes:
Electrical Characteristics @ T
IRF7555
Source-Drain Ratings and Characteristics
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
d(off)
r
f
SM
DSS
I
S
rr
V
fs
2
(BR)DSS
GS(th)
GSS
iss
oss
rss
SD
g
gs
gd
Repetitive rating; pulse width limited by
I
DS(on)
rr
T
Pulse width
max. junction temperature.
(BR)DSS
SD
J
150°C
-2.0A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
-140A/µs, V
Parameter
Parameter
DD
2%.
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
-0.60 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
––– -0.005 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1066 –––
–––
–––
–––
–––
–––
–––
-20
2.5
–––
–––
––– 0.055
––– 0.105
–––
–––
–––
––– -100
–––
402
126
–––
–––
2.1
2.5
–––
10
10
46
60
64
54
41
Surface mounted on FR-4 board, t
R
Starting T
G
-1.2
-1.0
–––
–––
–––
100
–––
–––
–––
–––
–––
-25
-1.2
= 25 , I
3.1
3.7
-34
15
-1.3
82
61
V/°C
J
µA
nA
nC
ns
pF
nC
ns
= 25°C, L = 8.0mH
V
V
S
AS
V
A
= -3.0A.
V
V
V
R
V
ƒ = 1.0MHz
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
I
R
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
integral reverse
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -3.0A
= -2.0A
= 25°C, I
= 25°C, I
= 5.0
= 6.0
= V
= -10V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -10V, I
= -16V, V
= -16V, V
= -12V
= 12V
= -5.0V
= -10V
= 0V
GS
Conditions
, I
D
S
F
D
= -250µA
Conditions
D
D
D
= -1.6A, V
= -2.5A
GS
= -250µA
GS
= -0.8A
= -4.3A
= -3.4A
= 0V
= 0V, T
10sec.
D
www.irf.com
= -1mA
GS
J
= 125°C
G
= 0V
S
D