MOSFET 2P-CH 20V 4.7A 8-TSSOP

IRF7750TR

Manufacturer Part NumberIRF7750TR
DescriptionMOSFET 2P-CH 20V 4.7A 8-TSSOP
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7750TR datasheet
 

Specifications of IRF7750TR

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs30 mOhm @ 4.7A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C4.7AVgs(th) (max) @ Id1.2V @ 250µA
Gate Charge (qg) @ Vgs39nC @ 5VInput Capacitance (ciss) @ Vds1700pF @ 15V
Power - Max1WMounting TypeSurface Mount
Package / Case8-TSSOPLead Free Status / RoHS StatusContains lead / RoHS non-compliant
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Ultra Low On-Resistance
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Dual P-Channel MOSFET
Very Small SOIC Package
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Low Profile ( < 1.1mm)
Available in Tape & Reel
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Description
®
HEXFET
power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier
provides the designer with an extremely efficient and reliable device for battery and load
is well known for,
management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into
extremely thin environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain- Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 70°C
Continuous Drain Current, V
D
C
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
C
P
@T
= 70°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
www.irf.com
HEXFET
TSSOP-8
Max.
@ -4.5V
±4.7
GS
@ -4.5V
±3.8
GS
0.64
0.008
-55 to + 150
Max.
ƒ
125
PD - 93848A
IRF7750
®
Power MOSFET
V
= -20V
DSS
R
= 0.030
DS(on)
Units
-20
V
A
±38
1.0
W
W/°C
± 12
V
°C
Units
°C/W
1
5/25/2000

IRF7750TR Summary of contents

  • Page 1

    ... HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier provides the designer with an extremely efficient and reliable device for battery and load is well known for, management ...

  • Page 2

    IRF7750 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V 100 -2.00V BOTTOM -1.50V 10 -1.50V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

  • Page 4

    IRF7750 2500 1MHz iss rss 2000 oss iss 1500 1000 500 C oss C ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

  • Page 6

    IRF7750 2.0 -4. 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J Fig 12. Normalized On-Resistance Vs. Temperature 0.08 0.06 0.04 0.02 0.00 Fig 14. Typical On-Resistance Vs. ...

  • Page 7

    TSSOP-8 Package Outline WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo ...