IRF7750TR International Rectifier, IRF7750TR Datasheet - Page 3

• Manufacturer Part Number: IRF7750TR
• Description: MOSFET 2P-CH 20V 4.7A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7750TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
100
100
0.1
10
10
1
1
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1.5
0.1
TOP
BOTTOM
-V
-V
DS
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2.0
1
T = 25 C
-1.50V
J
°
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
DS
J
2.5
10
T = 150 C
= -15V
J
°
°
3.0
100
1000
100
100
0.1
0.1
10
10
1
1
Fig 2. Typical Output Characteristics
0.1
0.2
TOP
BOTTOM
Fig 4. Typical Source-Drain Diode
-V
T = 150 C
-V
J
DS
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
SD
0.4
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
Forward Voltage
°
1
-1.50V
0.6
T = 25 C
IRF7750
20µs PULSE WIDTH
T = 150 C
0.8
J
J
10
°
°
V
1.0
GS
= 0 V
1.2
100
3