SI1499DH-T1-E3 Vishay, SI1499DH-T1-E3 Datasheet

MOSFET P-CH 8V 1.6A SC70-6

SI1499DH-T1-E3

Manufacturer Part Number
SI1499DH-T1-E3
Description
MOSFET P-CH 8V 1.6A SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI1499DH-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
78 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
800mV @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 4.5V
Input Capacitance (ciss) @ Vds
650pF @ 4V
Power - Max
2.78W
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Polarity
P Channel
Continuous Drain Current Id
1.6A
Drain Source Voltage Vds
-8V
On Resistance Rds(on)
424mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
-800mV
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.078 Ohms
Drain-source Breakdown Voltage
- 8 V
Gate-source Breakdown Voltage
+/- 5 V
Continuous Drain Current
1.6 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1499DH-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1499DH-T1-E3
Manufacturer:
Microchip
Quantity:
2 279
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 73338
S10-0792-Rev. F, 05-Apr-10
Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free)
D
D
G
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 8
1
2
3
(V)
SC-70 (6-LEADS)
SOT-363
Top View
0.078 at V
0.095 at V
0.115 at V
0.153 at V
0.424 at V
Si1499DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
6
5
4
GS
GS
GS
GS
GS
D
D
S
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
= - 1.2 V
J
a, b
(Ω)
= 150 °C)
a, d
P-Channel 1.2 V (G-S) MOSFET
Marking Code
BI
a, b
a, b
I
XX
D
- 1.6
Part #
Code
- 1.6
- 1.6
- 1.6
- 1.6
(A)
b
c
c, d
Lot Traceability
and Date Code
A
= 25 °C, unless otherwise noted
Q
10.5 nC
Steady State
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Ultra-Low On-Resistance
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Devices
Symbol
Symbol
T
R
R
Definition
- Guaranteed Operation at V
Critical for Optimized Design and Longer Battery Life
J
V
V
I
P
, T
I
DM
I
thJA
thJF
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
60
34
G
P-Channel MOSFET
- 55 to 150
- 1.6
- 1.6
- 1.3
2.5
- 1.6
- 6.5
- 1.6
Limit
-1.6
2.78
1.78
1
260
± 5
- 8
a, b
a, b, c
a, b
a, b, c
a, b
c
c
c
c
S
D
GS
Maximum
= 1.2 V
80
45
Vishay Siliconix
Si1499DH
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1499DH-T1-E3 Summary of contents

Page 1

... D Marking Code Top View Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free) Si1499DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current a, b Maximum Power Dissipation ...

Page 2

... Si1499DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 73338 S10-0792-Rev. F, 05-Apr- thru 1 1.5 2 Si1499DH Vishay Siliconix ° °C 6 125 ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 800 C iss 600 400 C oss 200 C rss Drain-to-Source Voltage (V) ...

Page 4

... Si1499DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1 250 µ 100 125 150 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1499DH Vishay Siliconix is based 150 °C, using D J(max) Notes ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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