SI1499DH-T1-E3 Vishay, SI1499DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1499DH-T1-E3
• Description: MOSFET P-CH 8V 1.6A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1499DH-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 4V
• Power - Max: 2.78W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.6A
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 424mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -800mV
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.078 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1499DH-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73338
S10-0792-Rev. F, 05-Apr-10
0.25
0.20
0.15
0.10
0.05
0.00
10
On-Resistance vs. Drain Current and Gate Voltage
5
4
3
2
1
0
8
6
4
2
0
0.0
0
0
I
D
V
= 2 A
GS
2
2
= 1.5 V
V
0.5
Output Characteristics
DS
V
Q
DS
-
g
I
D
4
Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
= 4 V
- Drain Current (A)
Gate Charge
4
V
1.0
6
GS
V
GS
V
= 1.8 V
DS
= 5 V thru 2 V
6
= 5.6 V
8
V
V
GS
GS
1.5
= 2.5 V
= 4.5 V
8
10
1.5 V
1 V
2.0
10
12
1000
1.6
1.4
1.2
1.0
0.8
0.6
800
600
400
200
10
8
6
4
2
0
- 50
0.0
0
0
On-Resistance vs. Junction Temperature
- 25
I
D
C
1
= 2 A
rss
0.5
V
Transfer Characteristics
V
GS
DS
0
T
2
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
25
Capacitance
1.0
3
C
T
C
iss
50
= - 55 °C
25 °C
Vishay Siliconix
4
C
V
oss
1.5
GS
75
Si1499DH
5
= 4.5 V
125 °C
V
www.vishay.com
100
GS
6
2.0
= 2.5 V
125
7
150
2.5
8
3