SI1499DH-T1-E3 Vishay, SI1499DH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1499DH-T1-E3
• Description: MOSFET P-CH 8V 1.6A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1499DH-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 4V
• Power - Max: 2.78W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.6A
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 424mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -800mV
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.078 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1499DH-T1-E3TR

Si1499DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.1
10
- 50
1
0
- 25
Source-Drain Diode Forward Voltage
0.2
T
J
= 150 °C
V
0
SD
0.4
T
Threshold Voltage
- Source-to-Drain Voltage (V)
J
25
- Temperature (°C)
0.6
50
0.8
I
D
75
= 250 µA
T
J
= 25 °C
0.01
1.0
100
100
0.1
10
1
0.1
Safe Operating Area, Junction-to-Ambient
* V
125
Limited by R
1.2
GS
>
150
1.4
minimum V
V
DS
DS(on)
- Drain-to-Source Voltage (V)
Single Pulse
T
A
*
GS
= 25 °C
at which R
1
DS(on)
12
10
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.1
1
10 µs, 100 µs
1 ms
10 ms
100 ms
1 s, 10 s
100 s, DC
V
10
GS
- Gate-to-Source Voltage (V)
T
J
T
A
= 25 °C
1
2
= 25 °C
Time (s)
T
S10-0792-Rev. F, 05-Apr-10
J
= 125 °C
Document Number: 73338
10
3
I
D
100
4
= 2 A
1000
5