SI4621DY-T1-E3 Vishay, SI4621DY-T1-E3 Datasheet

MOSFET P-CH 20V 6.2A 8-SOIC

SI4621DY-T1-E3

Manufacturer Part Number
SI4621DY-T1-E3
Description
MOSFET P-CH 20V 6.2A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4621DY-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
54 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 10V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.054 Ohm @ 10 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6.2A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
94mohm
Rds(on) Test Voltage Vgs
20V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4621DY-T1-E3TR

Available stocks

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Manufacturer
Quantity
Price
Part Number:
SI4621DY-T1-E3
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Quantity:
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Part Number:
SI4621DY-T1-E3
Manufacturer:
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Quantity:
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Part Number:
SI4621DY-T1-E3
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Ordering Information: Si4621DY-T1-E3 (Lead (Pb)-free)
Document Number: 73855
S09-2109-Rev. C, 12-Oct-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (MOSFET)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
V
V
DS
- 20
KA
20
A
G
A
S
(V)
(V)
1
2
3
4
0.094 at V
P-Channel 20-V (D-S) MOSFET with Schottky Diode
0.054 at V
Top View
Si4621DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Diode Forward Voltage
SO-8
R
DS(on)
GS
GS
0.45 at 1 A
= - 4.5 V
(Ω)
= - 10 V
J
V
= 150 °C) (MOSFET)
f
8
7
6
5
(V)
K
K
D
D
I
D
6.2
4.7
(A)
A
Q
= 25 °C, unless otherwise noted
I
4.5 nC
g
F
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
C
C
A
A
(Typ.)
(A)
2
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
a
Symbol
T
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• Compliant to RoHS Directive 2002/95/EC
• Portable Devices
J
V
V
V
I
I
P
, T
DM
I
I
FM
I
GS
DS
KA
D
S
F
D
Definition
- Ideal for Boost Circuits
- Ideal for Buck Circuits
stg
G
P-Channel MOSFET
®
Plus Schottky
- 55 to 150
S
D
1.7
1.3
1.6
1.0
Limit
- 5
- 4
± 20
- 6.2
- 2.6
2
- 20
- 25
- 5
3.1
2.7
1.7
20
2
b, c
5
2
b, c
b, c
b, c
b
b, c
b, c
b, c
a
Vishay Siliconix
Si4621DY
www.vishay.com
K
A
Unit
°C
W
V
A
1

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SI4621DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4621DY-T1-E3 (Lead (Pb)-free) Si4621DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) ...

Page 2

... Si4621DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Foot (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Foot (Drain) (Schottky) Notes: b. Surface Mounted on 1" x 1" FR4 board Maximum under Steady State conditions is 110 °C/W. g. Maximum under Steady State conditions is 115 °C/W. ...

Page 3

... S09-2109-Rev. C, 12-Oct-09 Symbol Test Conditions ° 1 1.7 A, dI/dt = 100 A/µ °C, unless otherwise noted J Symbol Test Conditions 125 ° ° 125 ° Si4621DY Vishay Siliconix Min. Typ. Max 0 ° Min. Typ. Max. 0.41 0.45 0.36 0.41 0.02 0.20 0 www.vishay.com Unit Unit ...

Page 4

... Si4621DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 0 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.20 0.15 0.10 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 6 Total Gate Charge (nC) g Gate Charge www.vishay.com °C, unless otherwise noted thru 2.5 ...

Page 5

... D 75 100 125 150 100 Limited DS(on 0 °C A Single Pulse BVDSS limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si4621DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage Time (s) Single Pulse Power, Junction-to-Ambient 100 µ ...

Page 6

... Si4621DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. www.vishay.com °C, unless otherwise noted ...

Page 7

... Single Pulse 0. Document Number: 73855 S09-2109-Rev. C, 12-Oct- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4621DY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...

Page 8

... Si4621DY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS T 100 0.1 0.01 0.001 0.0001 0.00001 - Junction Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com °C, unless otherwise noted 0.10 0.01 75 100 125 150 300 240 180 120 Reverse Voltage (V) RS Capacitance 150 ° °C J 0.0 ...

Page 9

... Document Number: 73855 S09-2109-Rev. C, 12-Oct- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4621DY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA (t) 3 ...

Page 10

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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