SI4621DY-T1-E3 Vishay, SI4621DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4621DY-T1-E3
• Description: MOSFET P-CH 20V 6.2A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4621DY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 54 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 10V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4621DY-T1-E3TR

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 73855
S09-2109-Rev. C, 12-Oct-09
100
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
30
10
1
- 50
0
- 25
0.2
Source-Drain Diode Forward Voltage
V
SD
T
0
J
0.4
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
Threshold Voltage
25
0.6
50
0.8
75
I
0.01
D
100
0.1
10
1
= 250 µA
100
1
0.1
Single Pulse
Limited by R
* V
T
1.2
125
A
Safe Operating Area, Junction-to-Case
DS
= 25 °C
> minimum V
V
150
1.4
A
DS
= 25 °C, unless otherwise noted
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS limited
at which R
DS(on)
10
0.30
0.25
0.20
0.15
0.10
0.05
0.00
50
40
30
20
10
0
is specified
10
0
-2
100 µs
100 ms
1 s
10 s
DC
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
On-Resistance vs. Gate-to-Source Voltage
10
2
100
V
-1
GS
- Gate-to-Source Voltage (V)
4
1
Time (s)
Vishay Siliconix
6
10
Si4621DY
T
T
A
A
www.vishay.com
I
= 125 °C
D
= 25 °C
8
= 5 A
100
600
10
5