SI4346DY-T1-E3 Vishay, SI4346DY-T1-E3 Datasheet

MOSFET N-CH 30V 5.9A 8-SOIC

SI4346DY-T1-E3

Manufacturer Part Number
SI4346DY-T1-E3
Description
MOSFET N-CH 30V 5.9A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4346DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
23 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Power - Max
1.31W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.023 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.9 A
Power Dissipation
1310 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
36mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4346DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4346DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4346DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4346DY-T1-E3
Quantity:
7 500
Company:
Part Number:
SI4346DY-T1-E3
Quantity:
7 500
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72958
S09-0392-Rev. E, 09-Mar-09
Ordering Information: Si4346DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
G
S
S
S
1
2
3
4
0.025 at V
0.030 at V
0.036 at V
0.023 at V
Si4346DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
Top View
SO-8
DS(on)
GS
GS
GS
GS
(Ω)
J
a
= 4.5 V
= 3.0 V
= 2.5 V
= 10 V
= 150 °C)
a
8
7
6
5
N-Channel 30-V (D-S) MOSFET
D
D
D
D
a
I
D
7.5
6.8
6.0
8
(A)
a
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
T
T
T
T
6.5
(Typ.)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• High-Side DC/DC Conversion
• Notebook Logic DC/DC, Low-Side
Symbol
Symbol
T
R
R
Available
- Notebook
- Desktop
- Server
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
g
Tested
®
Gen II Power MOSFET
Typical
10 s
6.5
2.2
2.5
1.6
43
74
22
G
8
N-Channel MOSFET
- 55 to 150
± 12
30
30
D
S
Steady State
Maximum
1.20
1.31
0.84
5.9
4.7
50
95
27
Vishay Siliconix
Si4346DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4346DY-T1-E3

SI4346DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4346DY-T1-E3 (Lead (Pb)-free) Si4346DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4346DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Gate Charge 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72958 S09-0392-Rev. E, 09-Mar- °C J 0.9 1.2 1.5 Si4346DY Vishay Siliconix 1200 1000 C iss 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 1.4 1.2 1.0 ...

Page 4

... Si4346DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (° Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 100 Limited DS(on D(on) Limited ° ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72958. Document Number: 72958 S09-0392-Rev. E, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4346DY Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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