SI4346DY-T1-E3 Vishay, SI4346DY-T1-E3 Datasheet - Page 4

MOSFET N-CH 30V 5.9A 8-SOIC

SI4346DY-T1-E3

Manufacturer Part Number
SI4346DY-T1-E3
Description
MOSFET N-CH 30V 5.9A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4346DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
23 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Power - Max
1.31W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.023 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.9 A
Power Dissipation
1310 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
36mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4346DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4346DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4346DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4346DY-T1-E3
Quantity:
7 500
Company:
Part Number:
SI4346DY-T1-E3
Quantity:
7 500
Si4346DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
- 0.2
- 0.4
- 0.6
- 0.8
0.1
0.4
0.2
0.0
2
1
- 50
10 -
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Single Pulse
0
Threshold Voltage
T
10 -
J
- Temperature (° C)
25
3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
10 -
100
0.1
10
1
100
0.1
2
* V
Limited by R
Limited
GS
I
D(on)
125
Single Pulse
T
>
A
Square Wave Pulse Duration (s)
minimum V
= 25 °C
V
150
DS
DS(on)
10 -
- Drain-to-Source Voltage (V)
Safe Operating Area
1
1
*
GS
at which R
BVDSS Limited
DS(on)
10
1
100
80
60
40
20
0
is specified
10 -
I
DM
3
Single Pulse Power, Junction-to-Ambient
Limited
1 ms
10 ms
100 ms
1 s
10 s
dc
100
10 -
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
2
DM
JM
-
T
t
1
A
= P
t
2
Time (s)
S09-0392-Rev. E, 09-Mar-09
DM
10 -
Z
Document Number: 72958
thJA
1
thJA
100
t
t
1
2
(t)
= 71 °C/W
1
600
10

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