IRFL214TRPBF Vishay, IRFL214TRPBF Datasheet

IRFL214TRPBF

Manufacturer Part Number

IRFL214TRPBF

Description

MOSFET N-CH 250V 790MA SOT223

Manufacturer

Vishay

Datasheets

1.IRFL214PBF.pdf (8 pages)

2.IRFL214TRPBF.pdf (10 pages)

Specifications of IRFL214TRPBF

Transistor Polarity

N-Channel

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

2 Ohm @ 470mA, 10V

Drain To Source Voltage (vdss)

250V

Current - Continuous Drain (id) @ 25° C

790mA

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

8.2nC @ 10V

Input Capacitance (ciss) @ Vds

140pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Minimum Operating Temperature

- 55 C

Configuration

Single Dual Drain

Resistance Drain-source Rds (on)

2 Ohm @ 10 V

Drain-source Breakdown Voltage

250 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.79 A

Power Dissipation

2000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Continuous Drain Current Id

790mA

Drain Source Voltage Vds

250V

On Resistance Rds(on)

2ohm

Rds(on) Test Voltage Vgs

10V

Leaded Process Compatible

Yes

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

IRFL214PBFTR
IRFL214TRPBF
IRFL214TRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFL214TRPBF

Manufacturer:

Quantity:

11 560

Company:

BOSTOCK HK LIMITED

Part Number:

IRFL214TRPBF

Manufacturer:

VISHAY

Quantity:

8 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFL214TRPBF

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 10
Download datasheet (229Kb)

Description

Third Generation HEXFETs from International Rectifier

provide the designer with the best combination of fast

switching, ruggedized device design, low on-resistance

and cost-effectiveness.

The SOT-223 package is designed for surface-mount using

vapor phase, infra red, or wave soldering techniques. Its

unique package design allows for easy automatic pick-and-

place as with other SOT or SOIC packages but has the

added advantage of improved thermal performance due to

an enlarged tab for heatsinking. Power dissipation of

grreater than 1.25W is possible in a typical surface mount

application.

Document Number: 91194

** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).

Thermal Resistance

HEXFET

dv/dt

Absolute Maximum Ratings

θJC

θJA

For recommended footprint and soldering techniques refer to application note #AN-994.

@ Tc = 25°C

@ Tc = 100°C

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Repetitive Avalanche Rated

Fast Switching

Ease of Paralleling

Simple Drive Requirements

Lead-Free

@Tc = 25°C

STG

= 25°C

Power MOSFET

Soldewring Temperature, for 10 seconds

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Power Dissipation (PCB Mount)**

Linear Derating Factor

Linear Derating Factor (PCB Mount)**

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-PCB

Junction-to-Ambient. (PCB Mount)**

Parameter

@ 10 V

Typ.

–––

300 (1.6mm from case)

IRFL214PbF

-55 to + 150

SOT-223

Max.

0.025

0.017

-/+20

0.79

0.50

0.79

0.31

4.8

6.3

3.1

2.0

Max.

DS(on)

DSS

= 0.79A

www.vishay.com

= 250V

= 2.0Ω

PD-95318

05/26/04

Units

°C/W

Units

W/°C

V/ns

°C

Related parts for IRFL214TRPBF

IRFL214TRPBF Summary of contents

Page 1

... IRFL214PbF - 150 300 (1.6mm from case) Typ. ––– ––– PD-95318 V = 250V DSS R = 2.0Ω DS(on 0.79A D SOT-223 Max. Units 0.79 0.50 A 6.3 3.1 2.0 W 0.025 0.017 W/°C -/+ 0.79 A 0.31 mJ 4.8 V/ns °C Max. Units 40 °C/W 60 05/26/04 www.vishay.com 1 ...

Page 2

... See Fig. 6 and 125V 2. Ω Ω, R See Fig Between lead, 6mm(0.25in) D from package and center G of die contact 25V DS ƒ = 1.0MHz, See Fig. 5 Conditions MOSFET symbol showing the integral reverse p-n junction diode 25° 0.79A 25° 2. di/dt = 100A/µ ≤ (BR)DSS www.vishay.com 2 ...

Page 3

... Document Number: 91194 IRFL214PbF www.vishay.com 3 ...

Page 4

... IRFL214PbF Document Number: 91194 www.vishay.com 4 ...

Page 5

... Document Number: 91194 IRFL214PbF www.vishay.com 5 ...

Page 6

... IRFL214PbF Document Number: 91194 www.vishay.com 6 ...

Page 7

... Document Number: 91194 IRFL214PbF www.vishay.com 7 ...

Page 8

... Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL014 INTERNATIONAL FL014 RECTIFIER LOGO Document Number: 91194 PART NUMBER 314P A = ASSEMBLY SITE DATE CODE CODE (YYWW YEAR WW = WEEK TOP P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) LOT CODE AXXXX BOTTOM www.vishay.com 8 ...

Page 9

... Data and specifications subject to change without notice. IRFL214PbF 0.35 (.013) 0.25 (.010) 16.30 (.641) 15.70 (.619) 2.30 (.090) 2.10 (.083) 50.00 (1.969) MIN. MAX. 4 TAC Fax: (310) 252-7903 05/04 www.vishay.com 9 ...

Page 10

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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