IRLD110PBF Vishay, IRLD110PBF Datasheet

IRLD110PBF

Manufacturer Part Number

IRLD110PBF

Description

MOSFET N-CH 100V 1A 4-DIP

Manufacturer

Vishay

Type

Power MOSFETr

Datasheets

1.IRLD110.pdf (8 pages)

2.IRLD110PBF.pdf (9 pages)

3.IRLD110PBF.pdf (9 pages)

Specifications of IRLD110PBF

Transistor Polarity

N-Channel

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

540 mOhm @ 600mA, 5V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

6.1nC @ 5V

Input Capacitance (ciss) @ Vds

250pF @ 25V

Power - Max

1.3W

Mounting Type

Through Hole

Package / Case

4-DIP (0.300", 7.62mm)

Minimum Operating Temperature

- 55 C

Configuration

Single Dual Drain

Resistance Drain-source Rds (on)

0.54 Ohm @ 5 V

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 10 V

Continuous Drain Current

1 A

Power Dissipation

1300 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Continuous Drain Current Id

Drain Source Voltage Vds

100V

On Resistance Rds(on)

540mohm

Rds(on) Test Voltage Vgs

Threshold Voltage Vgs Typ

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.54Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±10V

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Package Type

HexDIP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

*IRLD110PBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRLD110PBF

Manufacturer:

Quantity:

15 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRLD110PBF

Manufacturer:

Cypress

Quantity:

120

Company:

H&T Electronics

Part Number:

IRLD110PBF

Quantity:

70 000

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IRLD110PbF

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Document Number: 91309

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IRLD110PBF Summary of contents

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... Document Number: 91309 IRLD110PbF www.vishay.com 1 ...

Page 2

... Document Number: 91309 www.vishay.com 2 ...

Page 3

... Document Number: 91309 www.vishay.com 3 ...

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... Document Number: 91309 www.vishay.com 4 ...

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... Document Number: 91309 www.vishay.com 6 ...

... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ Document Number: 91309 + • • • • G • SD • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Forward Drop + - V =10V www.vishay.com 7 ...

Page 8

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 Document Number: 91309 PART NUMBER DAT E CODE (PYWWA) XXXX P = LEAD-FREE (optional YEAR WW = WEEK EMBLY S ITE CODE Data and specifications subject to change without notice. TAC Fax: (310) 252-7903 12/04 www.vishay.com 8 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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