MOSFET N-CH 100V 1A 4-DIP

IRLD110PBF

Manufacturer Part NumberIRLD110PBF
DescriptionMOSFET N-CH 100V 1A 4-DIP
ManufacturerVishay
TypePower MOSFET
IRLD110PBF datasheets
 


Specifications of IRLD110PBF

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs540 mOhm @ 600mA, 5V
Drain To Source Voltage (vdss)100VCurrent - Continuous Drain (id) @ 25° C1A
Vgs(th) (max) @ Id2V @ 250µAGate Charge (qg) @ Vgs6.1nC @ 5V
Input Capacitance (ciss) @ Vds250pF @ 25VPower - Max1.3W
Mounting TypeThrough HolePackage / Case4-DIP (0.300", 7.62mm)
Minimum Operating Temperature- 55 CConfigurationSingle Dual Drain
Resistance Drain-source Rds (on)0.54 Ohm @ 5 VDrain-source Breakdown Voltage100 V
Gate-source Breakdown Voltage+/- 10 VContinuous Drain Current1 A
Power Dissipation1300 mWMaximum Operating Temperature+ 175 C
Mounting StyleThrough HoleContinuous Drain Current Id1A
Drain Source Voltage Vds100VOn Resistance Rds(on)540mohm
Rds(on) Test Voltage Vgs5VThreshold Voltage Vgs Typ2V
Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res0.54Ohm
Drain-source On-volt100VGate-source Voltage (max)±10V
Operating Temp Range-55C to 175COperating Temperature ClassificationMilitary
MountingThrough HolePin Count4
Package TypeHexDIPLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names*IRLD110PBF  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (2Mb)Embed
Next
PRODUCT SUMMARY
V
(V)
DS
R
()
V
= 5.0 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
HVMDIP
G
S
G
D
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting T
= 25 °C, L = 183 mH, R
DD
J
 5.6 A, dI/dt  75 A/µs, V
 V
c. I
, T
SD
DD
DS
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91309
S10-2465-Rev. C, 08-Nov-10
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
100
• Repetitive Avalanche Rated
0.54
• For Automatic Insertion
6.1
• End Stackable
2.6
• Logic-Level Gate Drive
3.3
Single
• R
DS(on)
• 175 °C Operating Temperature
D
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
S
style which can be stacked in multiple combinations on
N-Channel MOSFET
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
HVMDIP
IRLD110PbF
SiHLD110-E3
IRLD110
SiHLD110
= 25 °C, unless otherwise noted)
A
T
= 25 °C
A
V
at 5.0 V
GS
T
= 100 °C
A
T
= 25 °C
A
for 10 s
= 25 , I
= 2.0 A (see fig. 12).
g
AS
 175 °C.
J
IRLD110, SiHLD110
Vishay Siliconix
Specified at V
= 4 V and 5 V
GS
device
design,
low
on-resistance
SYMBOL
LIMIT
V
100
DS
V
± 10
GS
1.0
I
D
0.70
I
8.0
DM
0.0083
E
490
AS
I
1.0
AR
E
0.13
AR
P
1.3
D
dV/dt
5.5
T
, T
- 55 to + 175
J
stg
d
300
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

IRLD110PBF Summary of contents

  • Page 1

    ... The 4 pin DIP package is a low cost machine-insertable case S style which can be stacked in multiple combinations on N-Channel MOSFET standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels HVMDIP IRLD110PbF SiHLD110-E3 IRLD110 SiHLD110 = 25 °C, unless otherwise noted °C ...

  • Page 2

    ... IRLD110, SiHLD110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

  • Page 3

    ... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 µs PULSE WIDTH T A Fig Typical Output Characteristics µs PULSE WIDTH T A Fig Typical Output Characteristics, T Document Number: 91309 S10-2465-Rev. C, 08-Nov- ° ° 175 °C = 175 °C Fig Normalized On-Resistance vs. Temperature A IRLD110, SiHLD110 Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

  • Page 4

    ... IRLD110, SiHLD110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 175 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91309 S10-2465-Rev. C, 08-Nov-10 ...

  • Page 5

    ... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91309 S10-2465-Rev. C, 08-Nov- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Rectangular Pulse Duration (s) , Rectangular Pulse Duration ( IRLD110, SiHLD110 Vishay Siliconix D.U. d(on) r d(off) f www.vishay.com 5 ...

  • Page 6

    ... IRLD110, SiHLD110 Vishay Siliconix Vary t to obtain p required I AS D.U 0. Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

  • Page 7

    ... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91309. Document Number: 91309 S10-2465-Rev ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...