IRLD024PBF Vishay, IRLD024PBF Datasheet

MOSFET N-CH 60V 2.5A 4-DIP

IRLD024PBF

Manufacturer Part Number
IRLD024PBF
Description
MOSFET N-CH 60V 2.5A 4-DIP
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRLD024PBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1.5A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 5V
Input Capacitance (ciss) @ Vds
870pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.1 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
2.5 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±10V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Package Type
HexDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRLD024PBF
PRODUCT SUMMARY
V
(V)
DS
R
()
V
= 5.0 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
HVMDIP
G
S
G
D
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting T
= 25 °C, L = 16 mH, R
DD
J
 17 A, dI/dt  140 A/µs, V
 V
c. I
SD
DD
DS
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91308
S10-2465-Rev. C, 08-Nov-10
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
60
• For Automatic Insertion
0.10
• End Stackable
18
• Logic-Level Gate Drive
4.5
• R
12
DS(on)
Single
• 175 °C Operating Temperature
• Fast Switching
D
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
S
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
N-Channel MOSFET
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
HVMDIP
IRLD024PbF
SiHLD024-E3
IRLD024
SiHLD024
= 25 °C, unless otherwise noted)
A
T
= 25 °C
A
V
at 5.0 V
GS
T
= 100 °C
A
T
= 25 °C
A
for 10 s
= 25 , I
= 2.5 A (see fig. 12).
g
AS
 175 °C.
, T
J
IRLD024, SiHLD024
Vishay Siliconix
Specified at V
= 4 V and 5 V
GS
device
design,
low
on-resistance
SYMBOL
LIMIT
V
60
DS
V
± 10
GS
2.5
I
D
1.8
I
20
DM
0.0083
E
91
AS
P
1.3
D
dV/dt
4.5
T
, T
- 55 to + 175
J
stg
d
300
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
W
V/ns
°C
1

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IRLD024PBF Summary of contents

Page 1

... The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on N-Channel MOSFET standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels HVMDIP IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024 = 25 °C, unless otherwise noted ° ...

Page 2

... IRLD024, SiHLD024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 µs PULSE WIDTH °C A Fig Typical Output Characteristics µs PULSE WIDTH T A Fig Typical Output Characteristics, T Document Number: 91308 S10-2465-Rev. C, 08-Nov- ° 175 °C = 175 °C A IRLD024, SiHLD024 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRLD024, SiHLD024 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 175 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91308 S10-2465-Rev. C, 08-Nov-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91308 S10-2465-Rev. C, 08-Nov- 5.0 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Rectangular Pulse Duration (s) , Rectangular Pulse Duration ( IRLD024, SiHLD024 Vishay Siliconix D.U. d(on) r d(off) f www.vishay.com 5 ...

Page 6

... IRLD024, SiHLD024 Vishay Siliconix Vary t to obtain p required I AS D.U. 5.0 V 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91308. Document Number: 91308 S10-2465-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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