MOSFET N-CH 60V 2.5A 4-DIP

IRLD024PBF

Manufacturer Part NumberIRLD024PBF
DescriptionMOSFET N-CH 60V 2.5A 4-DIP
ManufacturerVishay
TypePower MOSFET
IRLD024PBF datasheets
 

Specifications of IRLD024PBF

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs100 mOhm @ 1.5A, 5V
Drain To Source Voltage (vdss)60VCurrent - Continuous Drain (id) @ 25° C2.5A
Vgs(th) (max) @ Id2V @ 250µAGate Charge (qg) @ Vgs18nC @ 5V
Input Capacitance (ciss) @ Vds870pF @ 25VPower - Max1.3W
Mounting TypeThrough HolePackage / Case4-DIP (0.300", 7.62mm)
Minimum Operating Temperature- 55 CConfigurationSingle Dual Drain
Resistance Drain-source Rds (on)0.1 Ohm @ 5 VDrain-source Breakdown Voltage60 V
Gate-source Breakdown Voltage+/- 10 VContinuous Drain Current2.5 A
Power Dissipation1300 mWMaximum Operating Temperature+ 175 C
Mounting StyleThrough HoleContinuous Drain Current Id2.5A
Drain Source Voltage Vds60VOn Resistance Rds(on)100mohm
Rds(on) Test Voltage Vgs5VThreshold Voltage Vgs Typ2V
Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res0.1Ohm
Drain-source On-volt60VGate-source Voltage (max)±10V
Operating Temp Range-55C to 175COperating Temperature ClassificationMilitary
MountingThrough HolePin Count4
Package TypeHexDIPLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names*IRLD024PBF  
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PRODUCT SUMMARY
V
(V)
DS
R
()
V
= 5.0 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
HVMDIP
G
S
G
D
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting T
= 25 °C, L = 16 mH, R
DD
J
 17 A, dI/dt  140 A/µs, V
 V
c. I
SD
DD
DS
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91308
S10-2465-Rev. C, 08-Nov-10
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
60
• For Automatic Insertion
0.10
• End Stackable
18
• Logic-Level Gate Drive
4.5
• R
12
DS(on)
Single
• 175 °C Operating Temperature
• Fast Switching
D
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
S
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
N-Channel MOSFET
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
HVMDIP
IRLD024PbF
SiHLD024-E3
IRLD024
SiHLD024
= 25 °C, unless otherwise noted)
A
T
= 25 °C
A
V
at 5.0 V
GS
T
= 100 °C
A
T
= 25 °C
A
for 10 s
= 25 , I
= 2.5 A (see fig. 12).
g
AS
 175 °C.
, T
J
IRLD024, SiHLD024
Vishay Siliconix
Specified at V
= 4 V and 5 V
GS
device
design,
low
on-resistance
SYMBOL
LIMIT
V
60
DS
V
± 10
GS
2.5
I
D
1.8
I
20
DM
0.0083
E
91
AS
P
1.3
D
dV/dt
4.5
T
, T
- 55 to + 175
J
stg
d
300
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
W
V/ns
°C
1

IRLD024PBF Summary of contents

  • Page 1

    ... The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on N-Channel MOSFET standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels HVMDIP IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024 = 25 °C, unless otherwise noted ° ...

  • Page 2

    ... IRLD024, SiHLD024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

  • Page 3

    ... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 µs PULSE WIDTH °C A Fig Typical Output Characteristics µs PULSE WIDTH T A Fig Typical Output Characteristics, T Document Number: 91308 S10-2465-Rev. C, 08-Nov- ° 175 °C = 175 °C A IRLD024, SiHLD024 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

  • Page 4

    ... IRLD024, SiHLD024 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 175 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91308 S10-2465-Rev. C, 08-Nov-10 ...

  • Page 5

    ... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91308 S10-2465-Rev. C, 08-Nov- 5.0 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Rectangular Pulse Duration (s) , Rectangular Pulse Duration ( IRLD024, SiHLD024 Vishay Siliconix D.U. d(on) r d(off) f www.vishay.com 5 ...

  • Page 6

    ... IRLD024, SiHLD024 Vishay Siliconix Vary t to obtain p required I AS D.U. 5.0 V 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ ...

  • Page 7

    ... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91308. Document Number: 91308 S10-2465-Rev ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...