SI7160DP-T1-GE3 Vishay, SI7160DP-T1-GE3 Datasheet

MOSFET N-CH 30V 20A PPAK 8SOIC

SI7160DP-T1-GE3

Manufacturer Part Number
SI7160DP-T1-GE3
Description
MOSFET N-CH 30V 20A PPAK 8SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI7160DP-T1-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
2970pF @ 15V
Power - Max
27.7W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Transistor Polarity
N Channel + Schottky Diode
Continuous Drain Current Id
20A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
10mohm
Rds(on) Test Voltage Vgs
16V
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0087 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
17.8 A
Power Dissipation
5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7160DP-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7160DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 74954
S09-0273-Rev. B, 16-Feb-09
Ordering Information: Si7160DP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
30
8
(V)
6.15 mm
D
7
D
N-Channel 30-V (D-S) MOSFET with Schottky Diode
6
0.0087 at V
0.010 at V
D
PowerPAK SO-8
Bottom View
5
R
Si7160DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
DS(on)
GS
GS
1
(Ω)
J
= 4.5 V
S
= 10 V
= 150 °C)
b, f
2
S
3
S
5.15 mm
4
G
I
D
20
20
(A)
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
21
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• Ultra-Low On-Resistance Using High
• Q
• New Low Thermal Resistance PowerPAK
• 100 % R
• 100 % UIS Tested
• Notebook
Symbol
Symbol
T
R
R
Available
Density TrenchFET
MOSFET Technology
Package with Low 1.07 mm Profile
- Logic DC/DC
J
V
V
E
I
I
P
, T
I
DM
I
AS
thJA
thJC
DS
GS
AS
g
D
S
D
stg
Optimized
g
Tested
Typical
3.4
20
N-Channel MOSFET
®
- 55 to 150
Gen II Power
17.8
14.2
4.5
3.2
Limit
± 16
27.7
17.7
5
260
20
20
20
30
60
20
20
b, c
G
b, c
b, c
a
a
b, c
b, c
a
Maximum
4.5
25
Vishay Siliconix
D
S
Si7160DP
www.vishay.com
®
Schottky Diode
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI7160DP-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7160DP-T1-E3 (Lead (Pb)-free) Si7160DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7160DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 74954 S09-0273-Rev. B, 16-Feb- 1.5 2.0 2.5 3600 3000 2400 1800 1200 Si7160DP Vishay Siliconix 2.0 1.6 1.2 0 125 °C J 0.4 25 °C 0.0 0.6 1.2 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss 600 C ...

Page 4

... Si7160DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° °C 1 0.1 0.01 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.001 0.0001 0.00001 Temperature (°C) J Reverse Current (Schottky) www.vishay.com 4 0.6 0.8 1 100 125 150 100 Limited by R ...

Page 5

... Package Limited 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7160DP Vishay Siliconix 125 150 2.5 2.0 1.5 1.0 0.5 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com ...

Page 6

... Si7160DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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