MOSFET N-CH 100V 4.3A DPAK

IRLR110

Manufacturer Part NumberIRLR110
DescriptionMOSFET N-CH 100V 4.3A DPAK
ManufacturerVishay
IRLR110 datasheet
 

Specifications of IRLR110

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs540 mOhm @ 2.6A, 5VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C4.3AVgs(th) (max) @ Id2V @ 250µA
Gate Charge (qg) @ Vgs6.1nC @ 5VInput Capacitance (ciss) @ Vds250pF @ 25V
Power - Max2.5WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.54 Ohms
Drain-source Breakdown Voltage100 VGate-source Breakdown Voltage+/- 10 V
Continuous Drain Current4.3 APower Dissipation2.5 W
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRLR110  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 5.0 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
G
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHLR110-GE3
IRLR110PbF
Lead (Pb)-free
SiHLR110-E3
IRLR110
SnPb
SiHLR110
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting T
= 25 °C, L = 8.1 mH, R
DD
J
≤ 5.6 A, dI/dt ≤ 140 A/μs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91323
S10-1139-Rev. C, 17-May-10
IRLR110, IRLU110, SiHLR110, SiHLU110
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
100
Definition
• Dynamic dV/dt Rating
0.54
• Repetitive Avalanche Rated
6.1
• Surface Mount (IRLR110, SiHLR110)
2.0
• Straight Lead (IRLU110, SiHLU110)
3.3
• Available in Tape and Reel
Single
• Logic-Level Gate Drive
• R
DS(on)
D
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
S
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
N-Channel MOSFET
are possible in typical surface mount applications.
DPAK (TO-252)
SiHLR110TR-GE3
a
IRLR110TRPbF
a
SiHLR110T-E3
a
IRLR110TR
a
SiHLR110T
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 5.0 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= 4.3 A (see fig. 12).
g
AS
≤ 150 °C.
, T
J
Vishay Siliconix
Specified at V
= 4 V and 5 V
GS
device
design,
low
on-resistance
DPAK (TO-252)
IPAK (TO-251)
SiHLR110TRL-GE3
SiHLU110-GE3
IRLR110TRLPbF
IRLU110PbF
SiHLR110TL-E3
SiHLU110-E3
a
IRLR110TRL
IRLU110
a
SiHLR110TL
SiHLU110
SYMBOL
LIMIT
V
100
DS
V
± 10
GS
4.3
I
D
2.7
I
17
DM
0.20
0.020
E
100
AS
I
4.3
AR
E
2.5
AR
25
P
D
2.5
dV/dt
5.5
T
, T
- 55 to + 150
J
stg
d
260
www.vishay.com
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1

IRLR110 Summary of contents

  • Page 1

    ... FEATURES • Halogen-free According to IEC 61249-2-21 100 Definition • Dynamic dV/dt Rating 0.54 • Repetitive Avalanche Rated 6.1 • Surface Mount (IRLR110, SiHLR110) 2.0 • Straight Lead (IRLU110, SiHLU110) 3.3 • Available in Tape and Reel Single • Logic-Level Gate Drive • R ...

  • Page 2

    ... IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91323 S10-1139-Rev. C, 17-May-10 IRLR110, IRLU110, SiHLR110, SiHLU110 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91323 S10-1139-Rev. C, 17-May-10 ...

  • Page 5

    ... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91323 S10-1139-Rev. C, 17-May-10 IRLR110, IRLU110, SiHLR110, SiHLU110 5.0 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

  • Page 6

    ... IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Vary t to obtain p required I AS D.U 5.0 V 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...

  • Page 7

    ... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91323. Document Number: 91323 S10-1139-Rev. C, 17-May-10 IRLR110, IRLU110, SiHLR110, SiHLU110 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...