IRF830 Vishay, IRF830 Datasheet - Page 2

• Manufacturer Part Number: IRF830
• Description: MOSFET N-CH 500V 4.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF830

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF830; IRF830IR

IRF830, SiHF830
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
V
GS
GS
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
J
Reference to 25 °C, I
= 10 V
= 10 V
= 25 °C, I
= 400 V, V
= 12 Ω, R
V
V
V
V
TYP.
V
0.50
f = 1.0 MHz, see fig. 5
TEST CONDITIONS
DS
DS
DD
DS
GS
-
-
= 500 V, V
F
= V
= 250 V, I
= 50 V, I
= 0 V, I
V
V
= 3.1 A, dI/dt = 100 A/µs
V
GS
DS
S
D
GS
GS
GS
I
= 4.5 A, V
D
= 79 Ω, see fig. 10
= ± 20 V
, I
= 25 V,
= 0 V,
= 3.1 A, V
= 0 V, T
see fig. 6 and 13
D
D
D
= 250 µA
= 250 µA
D
GS
= 2.7 A
I
D
= 3.1 A
D
= 2.7 A
= 0 V
GS
= 1 mA
J
G
G
= 125 °C
DS
= 0 V
b
= 400 V,
b
MAX.
D
S
b
S
1.7
D
b
62
b
-
b
MIN.
500
2.0
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-81290-Rev. A, 16-Jun-08
Document Number: 91063
TYP.
0.61
610
160
320
8.2
4.5
7.5
1.0
68
16
42
16
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
S
250
640
4.0
1.5
5.0
4.5
1.6
2.0
25
38
22
18
and L
-
-
-
-
-
-
-
-
-
-
-
-
D
UNIT
V/°C
)
nA
µA
pF
nC
nH
µC
ns
ns
Ω
V
V
S
A
V