IRF830 Vishay, IRF830 Datasheet - Page 5

• Manufacturer Part Number: IRF830
• Description: MOSFET N-CH 500V 4.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF830

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF830; IRF830IR

Document Number: 91063
S-81290-Rev. A, 16-Jun-08
91063_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
5.0
4.0
3.0
2.0
1.0
0.0
AS
91063_11
25
R
10 V
G
10
0.1
10
V
T
-2
1
DS
C
10
50
, Case Temperature (°C)
t
-5
p
0 - 0.5
0.2
0.1
0.05
0.02
0.01
I
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
AS
D.U.T
0.01 Ω
L
10
100
-4
125
Single Pulse
(Thermal Response)
+
-
V
DD
10
150
t
-3
1
, Rectangular Pulse Duration (S)
A
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
t
IRF830, SiHF830
p
1
j
= P
P
D.U.T.
DM
DM
R
Vishay Siliconix
D
x Z
t
d(off)
V
t
1
1
thJC
(BR)DSS
/t
2
t
2
+ T
t
f
V
+
-
C
www.vishay.com
10
DD
V
DD
5