IRF830 Vishay, IRF830 Datasheet - Page 3

• Manufacturer Part Number: IRF830
• Description: MOSFET N-CH 500V 4.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF830

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF830; IRF830IR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91063
S-81290-Rev. A, 16-Jun-08
91063_02
91063_01
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
-1
-1
1
0
0
1
Top
Bottom
Top
Bottom
V
V
DS ,
DS
10
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
V
, Drain-to-Source Voltage (V)
0
Drain-to-Source Voltage (V)
GS
GS
10
0
20 µs Pulse Width
T
20 µs Pulse Width
T
10
C
C
1
=
=
10
25 °C
150 °C
1
C
C
= 150 °C
= 25 °C
4.5 V
4.5 V
91063_04
91063_03
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
- 60 - 40 - 20 0
1
0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= 3.1 A
150
= 10 V
V
5
°
GS ,
C
T
J ,
25
Gate-to-Source Voltage (V)
Junction Temperature (°C)
°
C
6
20 40 60 80 100 120 140 160
IRF830, SiHF830
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3