IRFBC30A Vishay, IRFBC30A Datasheet - Page 6

• Manufacturer Part Number: IRFBC30A
• Description: MOSFET N-CH 600V 3.6A TO-220AB
• Manufacturer: Vishay

Specifications of IRFBC30A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFBC30A

IRFBC30A, SiHFBC30A
Vishay Siliconix
www.vishay.com
6
740
720
700
680
660
640
0.0
Fig. 12d - Typical Drain-to-Source Voltage vs.
I AV , Avalanche Current ( A)
1.0
Avalanche Current
2.0
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
700
600
500
400
300
200
100
0
3.0
25
Starting T , Junction Temperature( C)
50
4.0
J
75
100
TOP
BOTTOM
10 V
Fig. 13a - Basic Gate Charge Waveform
125
12 V
V
V
Fig. 13b - Gate Charge Test Circuit
G
GS
Same type as D.U.T.
°
Current regulator
1.6A
2.3A
3.6A
I D
Q
0.2 µF
GS
150
Current sampling resistors
3 mA
50 kΩ
Charge
Q
0.3 µF
Q
GD
G
I
G
Document Number: 91108
S-81243-Rev. A, 21-Jul-08
D.U.T.
I
D
+
-
V
DS