2SK3018T106 Rohm Semiconductor, 2SK3018T106 Datasheet - Page 3

• Manufacturer Part Number: 2SK3018T106
• Description: MOSFET N-CH 30V .1A SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of 2SK3018T106

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Input Capacitance (ciss) @ Vds: 13pF @ 5V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 4V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.1 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SK3018T106TR

Transistor
Fig.13 Switching time measurement circuit
Switching characteristics measurement circuit
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
5m
2m
1m
Fig.10 Reverse drain current vs.
Fig.7 Static drain-source on-state
0
9
8
7
6
5
4
3
2
1
0
−50
SOURCE-DRAIN VOLTAGE : V
V
CHANNEL TEMPERATURE : Tch (°C)
GS
−25
R
source-drain voltage ( ΙΙ )
G
=4V
resistance vs. channel
temperature
I
0
D
0.5
=100mA
V
GS
25
0V
D.U.T.
50
1
75
I
I
D
D
=50mA
100 125
Ta=25 °C
Pulsed
SD
V
Pulsed
(V)
GS
=4V
R
V
1.5
DD
L
150
V
DS
0.5
50
20
10
5
2
1
0.005
0.002
0.001
0.1
0.05
0.02
0.01
Fig.11 Typical capacitance vs.
0.5
0.2
0.1
Fig.8 Forward transfer
0.0001
DRAIN-SOURCE VOLTAGE : V
0.2
0.0002 0.0005 0.001 0.002
Ta=−25 °C
admittance vs. drain current
0.5
drain-source voltage
125 °C
DRAIN CURRENT : I
25 °C
75 °C
1
V
V
GS
DS
2
0.005 0.01 0.02
Fig.14 Switching time waveforms
t
d(on)
5
10%
t
50%
on
10
D
10%
t
r
0.05
(A)
Ta =25 °C
f=1MH
V
DS
C
C
C
GS
20
oss
iss
0.1 0.2
rss
V
Pulsed
(V)
Pulse width
=0V
DS
90%
Z
=3V
50
0.5
200m
100m
1000
0.5m
0.2m
0.1m
50m
20m
10m
500
200
100
Fig.12 Switching characteristics
5m
2m
1m
50
20
10
Fig.9 Reverse drain current vs.
90%
5
2
0.1
0
t
d(off)
t
t
0.2
d(on)
r
SOURCE-DRAIN VOLTAGE : V
t
source-drain voltage ( Ι )
d(off)
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
0.5
DRAIN CURRENT : I
t
off
t
f
t
f
50%
0.5
1
10%
90%
Rev.B
2
5
2SK3018
Ta=125 °C
10
1
−25 °C
D
75 °C
25 °C
(mA)
20
Ta =25°C
V
V
R
Pulsed
V
Pulsed
SD
DD
GS
GS
G
50
=10Ω
(V)
=5V
=5V
=0V
3/3
1.5
100