RTF015P02TL Rohm Semiconductor, RTF015P02TL Datasheet

MOSFET P-CH 20V 1.5A TUMT3

RTF015P02TL

Manufacturer Part Number
RTF015P02TL
Description
MOSFET P-CH 20V 1.5A TUMT3
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RTF015P02TL

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
135 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
5.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
560pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
TUMT3
Transistor Polarity
P Channel
Continuous Drain Current Id
1.5A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
135mohm
Rds(on) Test Voltage Vgs
-4.5V
Voltage Vgs Max
-12V
Operating Temperature
RoHS Compliant
Configuration
Single
Resistance Drain-source Rds (on)
0.135 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.5 A
Power Dissipation
800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Threshold Voltage Vgs Typ
2V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RTF015P02TLTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RTF015P02TL
Manufacturer:
ROHM
Quantity:
36 000
Transistors
DC-DC Converter (−20V, −1.5A)
RTF015P02
1) Low on-resistance. (80mΩ at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)
DC-DC converter
Silicon P-channel
MOS FET
Type
RTF015P02
Applications
Features
Structure
Packaging specifications
Package
Code
Basic ordering unit (pieces)
Taping
3000
TL
External dimensions (Unit : mm)
Equivalent circuit
1 ESD PROTECTION DIODE
2 BODY DIODE
TUMT3
(1)
0.3
1
0.65
0.1
0.05
(1)
2.0 0.1
1.3 0.1
Abbreviated symbol :
0.65
(3)
(3)
(2)
(2)
Each lead has same dimensions
0.17 0.05
2
0.85MAX
0.77 0.05
WV
(1) Gate
(2) Source
(3) Drain
0 to 0.1
RTF015P02
1/4

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RTF015P02TL Summary of contents

Page 1

Transistors DC-DC Converter (−20V, −1.5A) RTF015P02 Features 1) Low on-resistance. (80mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) Applications DC-DC converter Structure Silicon P-channel MOS FET Packaging specifications Package Taping Code Type ...

Page 2

Transistors Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation Channel temperature Range of Storage temperature Duty cycle 1% 2 Mounted on a ...

Page 3

Transistors Electrical characteristic curves 10 V 10V DS Pulsed Ta 125 0.1 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 GATE-SOURCE VOLTAGE : ...

Page 4

Transistors Measurement circuits D.U. Fig.10 Switching Time Measurement Circuit G(Const.) D.U. Fig.12 Gate Charge Measurement Circuit ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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