RTF015P02TL Rohm Semiconductor, RTF015P02TL Datasheet - Page 2

• Manufacturer Part Number: RTF015P02TL
• Description: MOSFET P-CH 20V 1.5A TUMT3
• Manufacturer: Rohm Semiconductor

Specifications of RTF015P02TL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 5.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 560pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: TUMT3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 135mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Voltage Vgs Max: -12V
• Operating Temperature: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 0.135 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RTF015P02TLTR

Transistors
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Source current
(Body diode)
1 Pw 10 s, Duty cycle 1%
2 Mounted on a ceramic board
Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Body diode characteristics (source-drain characteristics)
Forward voltage
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Parameter
charge
charge
Parameter
Continuous
Pulsed
Continuous
Pulsed
V
Symbol
R
V
(BR) DSS
t
t
VSD
C
I
I
C
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
iss
rss
r
gd
fs
f
gs
g
Min.
1.5
0.7
20
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
Typ.
100
110
180
560
5.2
1.3
1.4
90
55
12
12
38
12
1
1
2
Max.
135
150
250
2.0
1.2
10
55 to 150
1
Limits
150
0.8
1.5
0.6
20
12
6
6
Unit
m
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
A
A
V
I
V
V
I
I
I
V
V
V
f=1MHz
I
V
V
R
R
V
V
I
D
D
D
D
D
D
I
S
GS
DS
DS
DS
DS
GS
DD
GS
L
GS
DD
GS
= 1mA, V
= 1.5A, V
= 1.5A, V
= 1.5A, V
= 0.8A
= 1.5A
= 0.6A, V
=9
= 20V, V
= 10V, I
= 10V, I
= 10V
= 12V, V
=0V
= 4.5V
=10
= 4.5V
15V
15 V
Unit
W
V
V
A
A
A
A
C
C
Conditions
GS
GS
GS
GS
D
D
GS
DS
GS
= 1mA
= 0.8A
R
R
=0V
= 4.5V
= 4V
= 2.5V
=0V
=0V
L
GS
=0V
=10
10
RTF015P02
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