RTF015P02TL Rohm Semiconductor, RTF015P02TL Datasheet - Page 4

• Manufacturer Part Number: RTF015P02TL
• Description: MOSFET P-CH 20V 1.5A TUMT3
• Manufacturer: Rohm Semiconductor

Specifications of RTF015P02TL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 5.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 560pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: TUMT3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 135mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Voltage Vgs Max: -12V
• Operating Temperature: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 0.135 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RTF015P02TLTR

Transistors
Measurement circuits
Fig.12 Gate Charge Measurement Circuit
Fig.10 Switching Time Measurement Circuit
I
G(Const.)
R
R
G
G
V
V
GS
GS
D.U.T.
D.U.T.
I
I
D
D
R
R
V
V
L
L
DD
DD
V
V
DS
DS
V
V
GS
DS
V
t
d(on)
GS
Fig.13 Gate Charge Waveforms
V
Fig.11 Switching Waveforms
G
Q
gs
10%
t
on
50%
90%
Pulse Width
t
r
10%
Q
gd
Q
g
90%
RTF015P02
t
d(off)
t
Charge
off
50%
tf
90%
10%
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