MOSFET N-CH 60V 5A DPAK

2SK2503TL

Manufacturer Part Number2SK2503TL
DescriptionMOSFET N-CH 60V 5A DPAK
ManufacturerRohm Semiconductor
2SK2503TL datasheet
 

Specifications of 2SK2503TL

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs135 mOhm @ 2.5A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C5AVgs(th) (max) @ Id2.5V @ 1mA
Input Capacitance (ciss) @ Vds520pF @ 10VPower - Max20W
Mounting TypeSurface MountPackage / CaseDPak, TO-252 (2 leads+tab), SC-63
Transistor PolarityN ChannelContinuous Drain Current Id2.5A
Drain Source Voltage Vds60VOn Resistance Rds(on)135mohm
Rds(on) Test Voltage Vgs10VVoltage Vgs Max20V
Operating Temperature Range-55°C ToConfigurationSingle
Resistance Drain-source Rds (on)0.135 Ohm @ 10 VDrain-source Breakdown Voltage60 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current5 A
Power Dissipation20000 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Threshold Voltage Vgs Typ2.5VRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantGate Charge (qg) @ Vgs-
Other names2SK2503TL
2SK2503TLTR
  
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Transistors
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
µ
Pw
300
s, Duty cycle
1%
Min.
Typ.
Max.
Unit
I
± 100
nA
GSS
60
V
(BR)DSS
µA
I
10
DSS
V
1.0
2.5
V
GS(th)
0.11
0.135
R
DS(on)
0.17
0.20
Y
4.0
S
fs
C
520
pF
iss
C
240
pF
oss
C
100
pF
rss
t
5.0
ns
d(on)
t
20
ns
r
t
50
ns
d(off)
t
20
ns
f
2SK2503
Test Conditions
= ± 20V, V
=0V
V
GS
DS
=1mA, V
=0V
I
D
GS
=60V, V
=0V
V
DS
GS
=10V, I
=1mA
V
DS
D
=2.5A, V
=10V
I
D
GS
=2.5A, V
=4V
I
D
GS
=2.5A, V
=10V
I
D
DS
=10V
V
DS
=0V
V
GS
f=1MHz
=2.5A, V
=30V
I
D
DD
=10V
V
GS
=12Ω
R
L
=10Ω
R
G
Rev.A
2/5