IRLL3303TRPBF International Rectifier, IRLL3303TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRLL3303TRPBF
• Description: MOSFET N-CH 30V 4.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLL3303TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 840pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 4.6 A
• Power Dissipation: 2.1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLL3303PBFTR

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1 0 0
1 0 0
1 0
1 0
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
1
3.0
0.1
TO P
BOT TOM 3.0V
V
V
G S
3.5
15V
D S
VGS
10V
7.0V
5.5V
4.5V
4.0V
3.5V
T = 2 5 °C
, G a te -to -S o u rc e V o lta g e (V )
J
, D rain-to-S ourc e V oltage (V )
4.0
T = 1 5 0 ° C
J
1
V
2 0 µ s P U L S E W ID T H
4.5
20 µ s P U LS E W ID TH
T = 2 5°C
D S
J
= 1 0 V
3 .0V
5.0
5.5
1 0
A
A
1 0 0
2.0
1.5
1.0
0.5
0.0
1 0
Fig 2. Typical Output Characteristics
1
Fig 4. Normalized On-Resistance
-60
0.1
I
TOP
BOTTOM 3.0V
D
-40
= 4 .6A
T , Junction T em perature (°C )
V
-20
J
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
D S
Vs. Temperature
, D rain-to-S ource V oltage (V )
0
IRLL3303PbF
2 0
4 0
1
6 0
2 0µ s P U L S E W ID TH
T = 15 0°C
J
8 0
1 0 0 1 2 0 1 4 0 1 6 0
3 .0V
V
G S
= 10 V
3
1 0
A
A