IRLL3303TRPBF International Rectifier, IRLL3303TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLL3303TRPBF
• Description: MOSFET N-CH 30V 4.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLL3303TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 840pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 4.6 A
• Power Dissipation: 2.1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLL3303PBFTR

IRLL3303PbF
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
6
I
A S
R G
2 0 V
V D S
t p
I A S
D .U .T
0 .01 Ω
L
t p
1 5 V
V
(B R )D SS
D R IV E R
+
-
V D D
A
3 5 0
3 0 0
2 5 0
2 0 0
1 5 0
1 0 0
5 0
Fig 12c. Maximum Avalanche Energy
0
2 5
V
D D
S tarting T , J unc tion T em perature (°C )
= 15 V
5 0
Vs. Drain Current
J
7 5
1 0 0
TO P
B O TTO M
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1 2 5
3.7A
2.1 A
4 .6 A
I
D
1 5 0
A