IXTY1R4N60P IXYS, IXTY1R4N60P Datasheet - Page 2

• Manufacturer Part Number: IXTY1R4N60P
• Description: MOSFET N-CH 600V 1.4A D-PAK
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTY1R4N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 5.5V @ 25µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 Ohms
• Forward Transconductance Gfs (max / Min): 1.1 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 1.4
• Rds(on), Max, Tj=25°c, (?): 9.0
• Ciss, Typ, (pf): 140
• Qg, Typ, (nc): 5.2
• Trr, Typ, (ns): 500
• Pd, (w): 50
• Rthjc, Max, (k/w): 2.5
• Package Style: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
I
I
V
t
S
SM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
IXYS MOSFETs and IGBTs are covered by 4,835,592
SD
iss
oss
rss
thJC
thCS
thCS
g(on)
gs
gd
TO-251 (IXTU) Outline
one or moreof the following U.S. patents:
Test Conditions
V
V
V
R
V
(TO-220)
(TO-251)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 1.5 A, -di/dt =100 A/µs
=100 V, V
= 20 V; I
= 50 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
1. Gate
2. Drain
3. Source
4. Drain
GS
= 0 V,
D
DS
DS
GS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
, I
, I
4,931,844
5,017,508
5,034,796
D
Dim.
A
A1
b
b1
b2
c
c1
D
E
e
e1
H
L
L1
L2
D
= 0.5 I
=0.5 I
(T
(T
17.02
J
J
2.19
0.89
0.64
0.76
5.21
0.46
0.46
5.97
6.35
2.28
4.57
8.89
1.91
0.89
Min.
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
D25
Millimeter
17.78
Max.
BSC
BSC
2.38
1.14
0.89
1.14
5.46
0.58
0.58
6.22
6.73
9.65
2.28
1.27
Min.
Min.
0.7
5,237,481
5,381,025
5,486,715
Min.
.086
0.35
.025
.030
.205
.018
.018
.235
.250
.090
.180
.670
.350
.075
.035
Characteristic Values
Characteristic Values
Inches
Typ.
Typ.
Max.
.094
.045
.035
.045
.215
.023
.023
.245
.265
BSC
BSC
.700
.380
.090
.050
140
500
2.4
5.2
5.2
1.34
0.25
1.0
17
10
16
25
16
6,162,665
6,259,123 B1
6,306,728 B1
1.1
Max.
Max.
2.5 ° C/W
1.4
1.5
4
IXTP 1R4N60P IXTU 1R4N60P
° C/W
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
A
S
A
V
TO-220 (IXTP) Outline
TO-252 AA (IXTY) Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
Dim.
A1
A2
D1
E1
b1
b2
c1
e1
L1
L2
L3
A
D
E
H
b
c
e
L
3 - Source
Millimeter
2.19
0.89
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
9.40 10.42
0.51
0.64
0.89
2.54
Min. Max.
2.28 BSC
4.57 BSC
0
6,727,585
6,759,692
6,771,478 B2
IXTY 1R4N60P
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
1.02
1.02
1.27
2.92
Inches
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
2,4 - Drain
0.090 BSC
0.180 BSC
0
Max.
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115