IXTY1R4N60P IXYS, IXTY1R4N60P Datasheet - Page 4

• Manufacturer Part Number: IXTY1R4N60P
• Description: MOSFET N-CH 600V 1.4A D-PAK
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTY1R4N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 5.5V @ 25µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 Ohms
• Forward Transconductance Gfs (max / Min): 1.1 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 1.4
• Rds(on), Max, Tj=25°c, (?): 9.0
• Ciss, Typ, (pf): 140
• Qg, Typ, (nc): 5.2
• Trr, Typ, (ns): 500
• Pd, (w): 50
• Rthjc, Max, (k/w): 2.5
• Package Style: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
1000
100
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
4.5
3.5
2.5
1.5
0.5
10
1
0
4
3
2
1
0
1
0.4
4
0
f = 1MHz
5
4.5
0.5
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 11. Capacitance
10
T
J
T
=125
J
0.6
5
= 125
-40
25
V
V
15
V
º
G S
S D
º
º
C
D S
C
C
º
C
- Volts
- Volts
5.5
0.7
20
- Volts
25
0.8
6
C iss
C oss
C rss
30
T
J
= 25
0.9
6.5
35
º
C
40
1
7
10.0
1.0
0.1
0.00001
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
2
1
0
9
8
7
6
5
4
3
2
1
0
0
0
Fig. 12. Maxim um Transient Therm al
T
IXTP 1R4N60P IXTU 1R4N60P
J
0.2
V
I
I
= -40
125
0.0001
D
G
DS
25
= 0.7A
= 10mA
Fig. 8. Transconductance
1
º
º
= 300V
0.4
º
C
C
Pulse Width - Seconds
Fig. 10. Gate Charge
C
Q
0.6
0.001
G
Resistance
I
2
- NanoCoulombs
D
- Amperes
0.8
0.01
3
1
IXTY 1R4N60P
1.2
4
1.4
0.1
1.6
5
1
1.8