IXTY1R4N60P IXYS, IXTY1R4N60P Datasheet - Page 3

MOSFET N-CH 600V 1.4A D-PAK

IXTY1R4N60P

Manufacturer Part Number
IXTY1R4N60P
Description
MOSFET N-CH 600V 1.4A D-PAK
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXTY1R4N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
5.5V @ 25µA
Gate Charge (qg) @ Vgs
5.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9 Ohms
Forward Transconductance Gfs (max / Min)
1.1 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.4 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
1.4
Rds(on), Max, Tj=25°c, (?)
9.0
Ciss, Typ, (pf)
140
Qg, Typ, (nc)
5.2
Trr, Typ, (ns)
500
Pd, (w)
50
Rthjc, Max, (k/w)
2.5
Package Style
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTY1R4N60P
Manufacturer:
IXYS
Quantity:
18 000
© 2006 IXYS All rights reserved
1.4
1.2
0.8
0.6
0.4
0.2
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
1.4
1.2
0.8
0.6
0.4
0.2
1
0
2
1
1
0
0
0
0
0.2 0.4
V
GS
2
Fig. 3. Output Characteristics
Fig. 5. R
Fig. 1. Output Characteristics
5
= 10V
0.5 I
4
0.6 0.8
10
V
DS(on)
V
V
I
D25
GS
GS
D
V
6
D S
@ 125
D S
- Amperes
@ 25
= 10V
Value vs. I
= 10V
- Volts
8V
7V
Norm alized to
8V
7V
15
- Volts
1
8
º
º
6V
5V
C
C
1.2
6V
5V
10
20
1.4 1.6
D
T
J
12
T
= 125
J
= 25
25
14
º
º
1.8
C
C
30
16
2
1.6
1.4
1.2
0.8
0.6
0.4
0.2
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1
0
2
1
0
-50
Fig. 2. Extended Output Characteristics
0
-50
IXTP 1R4N60P IXTU 1R4N60P
Fig. 4. R
Value vs. Junction Tem perature
V
-25
3
GS
-25
Fig. 6. Drain Current vs. Case
= 10V
6
T
0
DS(on
C
T
0
J
- Degrees Centigrade
9
- Degrees Centigrade
Tem perature
I
25
D
)
25
Norm alized to 0.5 I
12
@ 25
V
= 1.4A
D S
50
V
15
50
- Volts
º
GS
C
IXTY 1R4N60P
= 10V
18
75
75
8V
7V
6V
5V
21
I
D
100
100
= 0.7A
24
D25
125
125
27
150
30
150

Related parts for IXTY1R4N60P