IRF1010ESTRLPBF International Rectifier, IRF1010ESTRLPBF Datasheet

IRF1010ESTRLPBF

Manufacturer Part Number

IRF1010ESTRLPBF

Description

MOSFET N-CH 60V 84A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF1010ESTRLPBF.pdf (11 pages)

2.IRF1010EL.pdf (11 pages)

Specifications of IRF1010ESTRLPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

12 mOhm @ 50A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

84A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

130nC @ 10V

Input Capacitance (ciss) @ Vds

3210pF @ 25V

Power - Max

200W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

N Channel

Continuous Drain Current Id

84A

Drain Source Voltage Vds

60V

On Resistance Rds(on)

12mohm

Rds(on) Test Voltage Vgs

10V

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

83 A

Power Dissipation

170 W

Mounting Style

SMD/SMT

Gate Charge Qg

86.6 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF1010ESTRLPBF
IRF1010ESTRLPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF1010ESTRLPBF

Manufacturer:

International Rectifier

Quantity:

38 871

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF1010ESTRLPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF1010ESTRLPBF

Quantity:

9 000

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Description

Absolute Maximum Ratings

Thermal Resistance

Advanced HEXFET

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF1010EL) is available for low-

profile applications.

www.irf.com

dv/dt

STG

θJC

θJA

Pak is suitable for high current applications because of its

@ T

Advanced Process Technology

Surface Mount (IRF1010ES)

Low-profile through-hole (IRF1010EL)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Junction-to-Ambient (PCB mount)**

Power MOSFETs from International

Parameter

@ 10V

Typ.

300 (1.6mm from case )

–––

10 lbf•in (1.1N•m)

HEXFET

-55 to + 175

IRF1010ES

IRF1010ESPbF

IRF1010ELPbF

Max.

330

200

± 20

1.4

4.0

Pak

‡

Power MOSFET

DS(on)

Max.

0.75

DSS

= 84A‡

IRF1010EL

TO-262

PD - 95444

= 60V

= 12mΩ

Units

°C/W

W/°C

V/ns

°C

Related parts for IRF1010ESTRLPBF

IRF1010ESTRLPBF Summary of contents

Page 1

Advanced Process Technology l l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) 175°C Operating Temperature l l Fast Switching Fully Avalanche Rated l Lead-Free l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

0V MHZ C iss = rss = C gd 5000 C oss = Ciss 4000 3000 Coss 2000 Crss ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 800 15V DRIVER 600 + 400 ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" Note: "P" sembly line pos ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL 3103L LOT CODE 1789 AS S EMB LED ON WW 19, 1997 EMB LY LINE "C" ...

Page 10

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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