IRF7416PBF International Rectifier, IRF7416PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7416PBF
• Description: MOSFET P-CH 30V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7416PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 60 ns
• Gate Charge Qg: 61 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 49 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
100
100
10
10
1
1
3.0
0.1
TOP
BOTTOM - 3.0V
-V
-V
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
3.5
VGS
GS
DS
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25°C
J
4.0
1
T = 150°C
J
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
4.5
DS
J
= -10V
-3.0V
5.0
5.5
10
A
A
100
2.0
1.5
1.0
0.5
0.0
10
1
-60
0.1
TOP
BOTTOM - 3.0V
I
D
-40
= -5.6A
T , Junction Temperature (°C)
-V
- 15V
-20
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
J
VGS
DS
, Drain-to-Source Voltage (V)
0
20
40
1
60
20µs PULSE WIDTH
T = 150°C
J
80
100 120 140 160
-3.0V
V
GS
= -10V
3
10
A
A