IRF7416PBF International Rectifier, IRF7416PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7416PBF
• Description: MOSFET P-CH 30V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7416PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 60 ns
• Gate Charge Qg: 61 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 49 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
4000
3000
2000
1000
100
10
1
0
0.4
1
T = 150°C
-V
V
J
DS
SD
0.6
V
C
C
C
C
C
, Drain-to-Source Voltage (V)
C
, Source-to-Drain Voltage (V)
GS
iss
rss
oss
oss
rss
iss
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
0.8
10
gd
gd
f = 1MHz
T = 25°C
J
, C
ds
1.0
SHORTED
V
GS
= 0V
100
1.2
A
A
100
10
1
20
16
12
0.1
8
4
0
0
T
T
Single Pulse
A
J
I
D
= 25 C
= 150 C
= -5.6A
OPERATION IN THIS AREA LIMITED
-V
DS
°
°
20
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
1
BY R
40
V
V
DS
DS
DS(on)
= -24V
= -15V
FOR TEST CIRCUIT
60
SEE FIGURE 9
10
www.irf.com
80
100us
1ms
10ms
100
100
A