IRF7416PBF International Rectifier, IRF7416PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7416PBF
• Description: MOSFET P-CH 30V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7416PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 60 ns
• Gate Charge Qg: 61 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 49 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
0.1
10
0.0001
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
12V
V
GS
V
G
Same Type as D.U.T.
Current Regulator
.2µF
Q
GS
(THERMAL RESPONSE)
0.001
50KΩ
-3mA
Current Sampling Resistors
SINGLE PULSE
.3µF
I
Q
Charge
G
Q
GD
G
D.U.T.
I
D
0.01
+
t , Rectangular Pulse Duration (sec)
-
1
V
DS
0.1
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
t
d(on)
J
t
≤ 0.1 %
r
≤ 1
DM
x Z
1
thJA
P
2
10
DM
+ T
A
t
t
1
d(off)
t
2
t
f
+
-
100
5