IRF6775MTR1PBF International Rectifier, IRF6775MTR1PBF Datasheet

IRF6775MTR1PBF

Manufacturer Part Number

IRF6775MTR1PBF

Description

MOSFET N-CH 150V 4.9A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6775MTR1PBF.pdf (10 pages)

Specifications of IRF6775MTR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

56 mOhm @ 5.6A, 10V

Drain To Source Voltage (vdss)

150V

Current - Continuous Drain (id) @ 25° C

4.9A

Vgs(th) (max) @ Id

5V @ 100µA

Gate Charge (qg) @ Vgs

36nC @ 10V

Input Capacitance (ciss) @ Vds

1411pF @ 25V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MZ

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

150 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

28 A

Power Dissipation

89 W

Gate Charge Qg

25 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6775MTR1PBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6775MTR1PBF

Manufacturer:

International Rectifier

Quantity:

1 789

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6775MTR1PBF

Manufacturer:

Quantity:

4 531

Company:

BOSTOCK HK LIMITED

Part Number:

IRF6775MTR1PBF

Manufacturer:

Quantity:

8 000

Current page: 1 of 10
Download datasheet (232Kb)

Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)

Features

• Latest MOSFET Silicon technology

• Key parameters optimized for Class-D audio amplifier

• Low R

• Low Q

• Low package stray inductance for reduced ringing and lower EMI

• Can deliver up to 250W per channel into 4Ω Load in

• Dual sided cooling compatible

· Compatible with existing surface mount technologies

· RoHS compliant containing no lead or bromide

·Lead-Free (Qualified up to 260°C Reflow)

Notes through

www.irf.com

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the

latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse

recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as

efficiency, THD, and EMI.

The IRF6775MPbF device utilizes DirectFET

inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI

performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The

DirectFET

tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for

Class-D audio amplifier applications.

Absolute Maximum Ratings

Thermal Resistance

Half-Bridge Configuration Amplifier

STG

θJA

θJC

θJ-PCB

applications

@ T

= 25°C

DS(on)

= 25°C

= 70°C

= 25°C

= 70°C

for better THD and improved efficiency

for better THD and lower EMI

package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-

for improved efficiency

‰

are on page 2

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Power Dissipation

Single Pulse Avalanche Energy

Avalanche Current

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

Parameter

packaging technology. DirectFET

@ 10V

DS(on)

G(int)

typ.

Typ.

12.5

IRF6775MTRPbF

–––

1.4

max.

typ. @ V

packaging technology offers lower parasitic

-40 to + 150

Max.

0.022

± 20

Key Parameters

150

4.9

3.9

2.8

1.8

5.6

= 10V

Max.

–––

1.4

package is compatible

DirectFET™ ISOMETRIC

25.0

150

3.0

Units

W/°C

°C/W

°C

4/17/07

Related parts for IRF6775MTR1PBF

IRF6775MTR1PBF Summary of contents

Page 1

Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low R for improved efficiency DS(on) • Low Q for better THD and improved efficiency g • Low Q for better THD and lower ...

Page 2

IRF6775MTRPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25V ≤ 60μs PULSE WIDTH 10 1 0.1 0.01 3.0 4.0 5.0 ...

Page 4

IRF6775MTRPbF 100 10 1 0.1 0.0 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 CaseTemperature (°C) Fig 9. Maximum Drain ...

Page 5

Gate-to-Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V D.U 20V V GS 0.01 Ω Fig 15a. Unclamped ...

Page 6

IRF6775MTRPbF DUT 20K Fig 17a. Gate Charge Test Circuit D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 18 VCC Driver Gate Drive P.W. D.U.T. I ...

Page 7

DirectFET™ Substrate and PCB Layout, MZ Outline ( Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs. www.irf.com IRF6775MTRPbF ). 7 ...

Page 8

IRF6775MTRPbF ™ Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs. ™ 8 DIMENSIONS IMPERIAL METRIC MAX CODE MIN MAX A 6.25 6.35 0.246 0.250 B ...

Page 9

DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7" reel, order IRF6775TR1PBF CODE ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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