IRF6775MTR1PBF International Rectifier, IRF6775MTR1PBF Datasheet - Page 8

• Manufacturer Part Number: IRF6775MTR1PBF
• Description: MOSFET N-CH 150V 4.9A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6775MTR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1411pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MZ
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 28 A
• Power Dissipation: 89 W
• Gate Charge Qg: 25 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6775MTR1PBFTR

IRF6775MTRPbF
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This
includes all recommendations for stencil and substrate designs.
8
™
™
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
CODE
A
B
E
K
P
C
D
F
G
H
J
L
M
R
MIN
1.13
6.25
4.80
3.85
0.35
0.68
0.68
0.93
0.63
0.28
2.53
0.616
0.020
0.08
METRIC
DIMENSIONS
1.26
MAX
6.35
5.05
3.95
0.45
0.72
0.72
0.97
0.67
0.32
2.66
0.676
0.080
0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.037
0.025
0.011
0.044
0.100
0.0235
0.0008
0.003
MAX
IMPERIAL
0.250
0.201
0.156
0.018
0.028
0.028
0.038
0.026
0.013
0.050
0.105
0.0274
0.0031
0.007
MAX
www.irf.com