IRF6775MTR1PBF International Rectifier, IRF6775MTR1PBF Datasheet - Page 3

MOSFET N-CH 150V 4.9A DIRECTFET

IRF6775MTR1PBF

Manufacturer Part Number
IRF6775MTR1PBF
Description
MOSFET N-CH 150V 4.9A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6775MTR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
56 mOhm @ 5.6A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1411pF @ 25V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MZ
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
28 A
Power Dissipation
89 W
Gate Charge Qg
25 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6775MTR1PBFTR

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Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
International Rectifier
Quantity:
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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
100000
10000
1000
100
Fig 1. Typical Output Characteristics
0.01
10
Fig 3. Typical Transfer Characteristics
100
100
0.1
10
10
1
1
1
3.0
0.1
V DS = 25V
≤ 60μs PULSE WIDTH
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4.0
10
1
Coss
Ciss
Crss
5.0
f = 1 MHZ
5.5V
≤ 60μs PULSE WIDTH
Tj = 25°C
6.0
100
10
TOP
BOTTOM
T J = 150°C
T J = 25°C
T J = -40°C
7.0
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
1000
100
8.0
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
0.5
Fig 2. Typical Output Characteristics
100
20
16
12
-60 -40 -20
10
8
4
0
1
0.1
I D = 5.6A
V GS = 10V
0
I D = 5.6A
IRF6775MTRPbF
TOP
BOTTOM
T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
0
10
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
20
V DS = 120V
VDS= 75V
VDS= 30V
1
40
20
60
≤ 60μs PULSE WIDTH
Tj = 150°C
5.5V
80 100 120 140 160
10
30
3
40
100

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