IRF6727MTR1PBF International Rectifier, IRF6727MTR1PBF Datasheet - Page 4

• Manufacturer Part Number: IRF6727MTR1PBF
• Description: MOSFET N-CH 30V 32A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6727MTR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 74nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6190pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 180 A
• Power Dissipation: 89 W
• Gate Charge Qg: 49 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6727MTR1PBFTR

IRF6727MPbF
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
100000
10000
1000
1000
1000
100
100
Fig 6. Typical Transfer Characteristics
0.01
0.1
100
10
0.1
10
1
Fig 4. Typical Output Characteristics
1
1.0
1
0.1
V DS = 15V
≤60µs PULSE WIDTH
T J = 150°C
T J = 25°C
T J = -40°C
1.5
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
V DS , Drain-to-Source Voltage (V)
2.3V
2.0
C iss
C rss
1
C oss
f = 1 MHZ
2.5
10
≤ 60µs PULSE WIDTH
Tj = 25°C
3.0
10
TOP
BOTTOM
3.5
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
4.0
100
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
2.0
1.5
1.0
0.5
10
1
7
6
5
4
3
2
1
0
-60 -40 -20 0
0.1
0
Fig 5. Typical Output Characteristics
I D = 32A
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
50
2.3V
I D , Drain Current (A)
1
20 40 60 80 100 120 140 160
V GS = 10V
V GS = 4.5V
100
≤ 60µs PULSE WIDTH
Tj = 150°C
150
10
TOP
BOTTOM
www.irf.com
T J = 25°C
200
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
250