IRF6727MTR1PBF International Rectifier, IRF6727MTR1PBF Datasheet - Page 8

• Manufacturer Part Number: IRF6727MTR1PBF
• Description: MOSFET N-CH 30V 32A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6727MTR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 74nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6190pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 180 A
• Power Dissipation: 89 W
• Gate Charge Qg: 49 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6727MTR1PBFTR

IRF6727MPbF
DirectFET™ Part Marking
8
™
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
MIN
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
0.616
0.020
0.08
METRIC
DIMENSIONS
1.42
1.01
MAX
6.35
5.05
3.95
0.45
0.72
0.72
0.84
0.42
0.676
0.080
0.17
2.41
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.0235
0.0008
0.003
MIN
IMPERIAL
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.0274
0.0031
0.007
MAX
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