IRF6727MTR1PBF International Rectifier, IRF6727MTR1PBF Datasheet - Page 6

• Manufacturer Part Number: IRF6727MTR1PBF
• Description: MOSFET N-CH 30V 32A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6727MTR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 74nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6190pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 180 A
• Power Dissipation: 89 W
• Gate Charge Qg: 49 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6727MTR1PBFTR

Fig 16a. Unclamped Inductive Test Circuit
IRF6727MPbF
Fig 15a. Gate Charge Test Circuit
0
6
R G
GS
20V
V DS
Fig 17a. Switching Time Test Circuit
t p
20K
1K
I AS
D.U.T
≤ 0.1 %
≤ 1
0.01 Ω
L
S
DUT
15V
L
DRIVER
+
- V DD
+
-
VCC
A
V
90%
10%
V
DS
GS
Fig 15b. Gate Charge Waveform
Id
Fig 16b. Unclamped Inductive Waveforms
I
Vgs
AS
Fig 17b. Switching Time Waveforms
t
d(on)
Qgodr
t
r
t p
Qgd
t
d(off)
Qgs2
V
Vgs(th)
(BR)DSS
Vds
Qgs1
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t
f