IRF6724MTR1PBF International Rectifier, IRF6724MTR1PBF Datasheet - Page 5

• Manufacturer Part Number: IRF6724MTR1PBF
• Description: MOSFET N-CH 30V 27A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6724MTR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4404pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6724MTR1PBFTR

Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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1000.0
100.0
10.0
150
100
1.0
0.1
50
0
25
0.2
T J = 150°C
T J = 25°C
T J = -40°C
V SD , Source-to-Drain Voltage (V)
0.4
50
T C , Case Temperature (°C)
0.6
75
Fig 14. Maximum Avalanche Energy Vs. Drain Current
100
0.8
50
40
30
20
10
V GS = 0V
0
125
1.0
25
Starting T J , Junction Temperature (°C)
1.2
150
50
75
100
TOP
BOTTOM
Fig 13. Typical Threshold Voltage vs. Junction
1000
2.5
2.0
1.5
1.0
0.5
100
0.1
125
10
-75
1
8.4A
7.2A
21A
I D
0.1
T A = 25°C
Tj = 150°C
Single Pulse
-50
Fig11. Maximum Safe Operating Area
150
T J , Junction Temperature ( °C )
V DS , Drain-toSource Voltage (V)
-25
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Temperature
0
1.0
IRF6724MPbF
10msec
25
50
I D = 100µA
100µsec
10.0
75
1msec
100
125
100.0
150
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